Interband Transitions in Monolayer and Few-Layer WSe2 Probed Using Photoexcited Charge Collection Spectroscopy

Kyunghee Choi; Kimoon Lee; Sanghyuck Yu; Sehoon Oh; Hyoung Joon Choi; Heesun Bae; Seongil Im

doi:10.1021/acsami.8b04056

Interband Transitions in Monolayer and Few-Layer WSe₂ Probed Using Photoexcited Charge Collection Spectroscopy

Kyunghee Choi, Kimoon Lee, Sanghyuck Yu, Sehoon Oh, Hyoung Joon Choi, Heesun Bae, Seongil Im

Department of Physics

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Transition-metal dichalcogenides are currently under rigorous investigation because of their distinct layer-dependent physical properties originating from the corresponding evolution of the band structure. Here, we report the highly resolved probing of layer-dependent band structure evolution for WSe₂ using photoexcited charge collection spectroscopy (PECCS). Monolayer, few-layer, and multilayer WSe₂ can be probed in top-gate field-effect transistor platforms, and their interband transitions are efficiently observed. Our theoretical calculations show a great coincidence with the PECCS results, proving that the indirect ⌈-K and ⌈-λ transitions as well as the direct K-K transition are clearly resolved in multilayer WSe₂ by PECCS.

Original language	English
Pages (from-to)	20213-20218
Number of pages	6
Journal	ACS Applied Materials and Interfaces
Volume	10
Issue number	24
DOIs	https://doi.org/10.1021/acsami.8b04056
Publication status	Published - 2018 Jun 20

Bibliographical note

Funding Information:
This research was supported by the SRC program: vdWMRC Center through the National Research Foundation (NRF) of Korea funded by the Ministry of Education (Grant 2017R1A5A1014862). K.L. and H.B. acknowledge the Basic Science Research Program through the NRF (Grants 2016R1D1A3B03933785 and 2017R1D1A1B03028257). S.O. and H.J.C. acknowledge support from the NRF (Grant 2011-0018306). Computational resources were provided by the KISTI Supercomputing Center (Project KSC-2017-C3-0079).

Publisher Copyright:
© 2018 American Chemical Society.

All Science Journal Classification (ASJC) codes

Materials Science(all)

Access to Document

10.1021/acsami.8b04056

Cite this

@article{4d934ec922f648158fe9042cde546a7e,

title = "Interband Transitions in Monolayer and Few-Layer WSe2 Probed Using Photoexcited Charge Collection Spectroscopy",

abstract = "Transition-metal dichalcogenides are currently under rigorous investigation because of their distinct layer-dependent physical properties originating from the corresponding evolution of the band structure. Here, we report the highly resolved probing of layer-dependent band structure evolution for WSe2 using photoexcited charge collection spectroscopy (PECCS). Monolayer, few-layer, and multilayer WSe2 can be probed in top-gate field-effect transistor platforms, and their interband transitions are efficiently observed. Our theoretical calculations show a great coincidence with the PECCS results, proving that the indirect ⌈-K and ⌈-λ transitions as well as the direct K-K transition are clearly resolved in multilayer WSe2 by PECCS.",

author = "Kyunghee Choi and Kimoon Lee and Sanghyuck Yu and Sehoon Oh and Choi, {Hyoung Joon} and Heesun Bae and Seongil Im",

note = "Funding Information: This research was supported by the SRC program: vdWMRC Center through the National Research Foundation (NRF) of Korea funded by the Ministry of Education (Grant 2017R1A5A1014862). K.L. and H.B. acknowledge the Basic Science Research Program through the NRF (Grants 2016R1D1A3B03933785 and 2017R1D1A1B03028257). S.O. and H.J.C. acknowledge support from the NRF (Grant 2011-0018306). Computational resources were provided by the KISTI Supercomputing Center (Project KSC-2017-C3-0079). Publisher Copyright: {\textcopyright} 2018 American Chemical Society.",

year = "2018",

month = jun,

day = "20",

doi = "10.1021/acsami.8b04056",

language = "English",

volume = "10",

pages = "20213--20218",

journal = "ACS Applied Materials and Interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

number = "24",

}

TY - JOUR

T1 - Interband Transitions in Monolayer and Few-Layer WSe2 Probed Using Photoexcited Charge Collection Spectroscopy

AU - Choi, Kyunghee

AU - Lee, Kimoon

AU - Yu, Sanghyuck

AU - Oh, Sehoon

AU - Choi, Hyoung Joon

AU - Bae, Heesun

AU - Im, Seongil

N1 - Funding Information: This research was supported by the SRC program: vdWMRC Center through the National Research Foundation (NRF) of Korea funded by the Ministry of Education (Grant 2017R1A5A1014862). K.L. and H.B. acknowledge the Basic Science Research Program through the NRF (Grants 2016R1D1A3B03933785 and 2017R1D1A1B03028257). S.O. and H.J.C. acknowledge support from the NRF (Grant 2011-0018306). Computational resources were provided by the KISTI Supercomputing Center (Project KSC-2017-C3-0079). Publisher Copyright: © 2018 American Chemical Society.

PY - 2018/6/20

Y1 - 2018/6/20

N2 - Transition-metal dichalcogenides are currently under rigorous investigation because of their distinct layer-dependent physical properties originating from the corresponding evolution of the band structure. Here, we report the highly resolved probing of layer-dependent band structure evolution for WSe2 using photoexcited charge collection spectroscopy (PECCS). Monolayer, few-layer, and multilayer WSe2 can be probed in top-gate field-effect transistor platforms, and their interband transitions are efficiently observed. Our theoretical calculations show a great coincidence with the PECCS results, proving that the indirect ⌈-K and ⌈-λ transitions as well as the direct K-K transition are clearly resolved in multilayer WSe2 by PECCS.

AB - Transition-metal dichalcogenides are currently under rigorous investigation because of their distinct layer-dependent physical properties originating from the corresponding evolution of the band structure. Here, we report the highly resolved probing of layer-dependent band structure evolution for WSe2 using photoexcited charge collection spectroscopy (PECCS). Monolayer, few-layer, and multilayer WSe2 can be probed in top-gate field-effect transistor platforms, and their interband transitions are efficiently observed. Our theoretical calculations show a great coincidence with the PECCS results, proving that the indirect ⌈-K and ⌈-λ transitions as well as the direct K-K transition are clearly resolved in multilayer WSe2 by PECCS.

UR - http://www.scopus.com/inward/record.url?scp=85048356153&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85048356153&partnerID=8YFLogxK

U2 - 10.1021/acsami.8b04056

DO - 10.1021/acsami.8b04056

M3 - Article

C2 - 29882405

AN - SCOPUS:85048356153

SN - 1944-8244

VL - 10

SP - 20213

EP - 20218

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 24

ER -