Integration of high dielectric (Ba1-xSrx)TiO3 thin films into new barrier layer electrode structures

Jae Chang Lee; Eun Suck Choi; Soon Gil Yoon; Dong Soo Yoon; Hong Koo Baik

doi:10.1149/1.1392437

Integration of high dielectric (Ba_1-xSr_x)TiO₃ thin films into new barrier layer electrode structures

Jae Chang Lee, Eun Suck Choi, Soon Gil Yoon, Dong Soo Yoon, Hong Koo Baik

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

(Ba_1-xSr_x)TiO₃ (BST) films were deposited on the new electrode structures of Pt/RuO₂ + Ta/TiSi₂/poly-Si/SiO₂/Si (PRTS) and Pt/RuO₂ + Ta/poly-Si/SiO₂/Si (PRS) by metallorganic chemical vapor deposition. The films deposited on PRTS show smoother morphologies than those on PRS. Titanium-silicide (TiSi₂) buffer layers formed on poly-Si play an important role in decreasing the roughness of each layer as well as contact resistance between RuO₂ + Ta and poly-Si. The electrode structures showed a stable morphology after deposition of BST films and annealing at 750°C. The 80 nm thick BST films deposited on PRTS showed a dielectric constant of 240 and dissipation factor of 0.01 at 100 kHz. The BST films deposited on PRTS have a leakage current density of about 4.0 × 10^-7 A/cm² at 190 kV/cm and breakdown strength of 290 kV/cm.

Original language	English
Pages (from-to)	3101-3104
Number of pages	4
Journal	Journal of the Electrochemical Society
Volume	146
Issue number	8
DOIs	https://doi.org/10.1149/1.1392437
Publication status	Published - 1999 Aug

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1149/1.1392437

Cite this

@article{dd9aa4cddc704f1482488132f76d22f9,

title = "Integration of high dielectric (Ba1-xSrx)TiO3 thin films into new barrier layer electrode structures",

abstract = "(Ba1-xSrx)TiO3 (BST) films were deposited on the new electrode structures of Pt/RuO2 + Ta/TiSi2/poly-Si/SiO2/Si (PRTS) and Pt/RuO2 + Ta/poly-Si/SiO2/Si (PRS) by metallorganic chemical vapor deposition. The films deposited on PRTS show smoother morphologies than those on PRS. Titanium-silicide (TiSi2) buffer layers formed on poly-Si play an important role in decreasing the roughness of each layer as well as contact resistance between RuO2 + Ta and poly-Si. The electrode structures showed a stable morphology after deposition of BST films and annealing at 750°C. The 80 nm thick BST films deposited on PRTS showed a dielectric constant of 240 and dissipation factor of 0.01 at 100 kHz. The BST films deposited on PRTS have a leakage current density of about 4.0 × 10-7 A/cm2 at 190 kV/cm and breakdown strength of 290 kV/cm.",

author = "Lee, {Jae Chang} and Choi, {Eun Suck} and Yoon, {Soon Gil} and Yoon, {Dong Soo} and Baik, {Hong Koo}",

year = "1999",

month = aug,

doi = "10.1149/1.1392437",

language = "English",

volume = "146",

pages = "3101--3104",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

number = "8",

}

TY - JOUR

T1 - Integration of high dielectric (Ba1-xSrx)TiO3 thin films into new barrier layer electrode structures

AU - Lee, Jae Chang

AU - Choi, Eun Suck

AU - Yoon, Soon Gil

AU - Yoon, Dong Soo

AU - Baik, Hong Koo

PY - 1999/8

Y1 - 1999/8

N2 - (Ba1-xSrx)TiO3 (BST) films were deposited on the new electrode structures of Pt/RuO2 + Ta/TiSi2/poly-Si/SiO2/Si (PRTS) and Pt/RuO2 + Ta/poly-Si/SiO2/Si (PRS) by metallorganic chemical vapor deposition. The films deposited on PRTS show smoother morphologies than those on PRS. Titanium-silicide (TiSi2) buffer layers formed on poly-Si play an important role in decreasing the roughness of each layer as well as contact resistance between RuO2 + Ta and poly-Si. The electrode structures showed a stable morphology after deposition of BST films and annealing at 750°C. The 80 nm thick BST films deposited on PRTS showed a dielectric constant of 240 and dissipation factor of 0.01 at 100 kHz. The BST films deposited on PRTS have a leakage current density of about 4.0 × 10-7 A/cm2 at 190 kV/cm and breakdown strength of 290 kV/cm.

AB - (Ba1-xSrx)TiO3 (BST) films were deposited on the new electrode structures of Pt/RuO2 + Ta/TiSi2/poly-Si/SiO2/Si (PRTS) and Pt/RuO2 + Ta/poly-Si/SiO2/Si (PRS) by metallorganic chemical vapor deposition. The films deposited on PRTS show smoother morphologies than those on PRS. Titanium-silicide (TiSi2) buffer layers formed on poly-Si play an important role in decreasing the roughness of each layer as well as contact resistance between RuO2 + Ta and poly-Si. The electrode structures showed a stable morphology after deposition of BST films and annealing at 750°C. The 80 nm thick BST films deposited on PRTS showed a dielectric constant of 240 and dissipation factor of 0.01 at 100 kHz. The BST films deposited on PRTS have a leakage current density of about 4.0 × 10-7 A/cm2 at 190 kV/cm and breakdown strength of 290 kV/cm.

UR - http://www.scopus.com/inward/record.url?scp=0032592380&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032592380&partnerID=8YFLogxK

U2 - 10.1149/1.1392437

DO - 10.1149/1.1392437

M3 - Article

AN - SCOPUS:0032592380

SN - 0013-4651

VL - 146

SP - 3101

EP - 3104

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 8

ER -