@inproceedings{1907f31518a74133b47f7045627f73b4,
title = "Instant glue passivation layer of indium-gallium-zinc oxide thin film transistors",
abstract = "We suggest instant glue for passivation layer of indium-gallium-zinc oxide (IGZO) thin film transistors (TFTs). The instant glue is liquid in room temperature, thus we could easily drop the glue on the IGZO channel layer. As a result, the IGZO TFTs with glue passivation layer (GPL) showed improved electrical characteristics such as field effect mobility of 12.11 cm2/Vs, on/off ratio of 8.72 x 107, and subthreshold swing of 0.39 V/dec. Furthermore, stability test under positive bias temperature stress of IGZO TFTs with GPL showed low threshold voltage shift at 1.0 V. These results indicate that GPL can play significant role for both improving electrical characteristics and enhancing stability by blocking the oxygen and moisture in atmosphere efficiently.",
author = "Hyukjoon Yoo and Tak, {Young Jun} and Kang, {Byung Ha} and Kim, {Hyun Jae}",
year = "2017",
month = aug,
day = "8",
language = "English",
series = "AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "306--308",
booktitle = "AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices",
address = "United States",
note = "24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017 ; Conference date: 04-07-2017 Through 07-07-2017",
}