Degradation mechanism of foldable thin film transistors (TFTs) is investigated experimentally by electrical, mechanical and electrical–mechanical hybrid stress experiments. Mechanical and electrical stress environment was set for foldable TFTs and the degradation effect according to the applied stress is investigated and analyzed. Degradation mechanism model that can explain the defect generation is suggested to explain the result of electrical–mechanical hybrid stress experiment.
|Number of pages||4|
|Publication status||Published - 2016 Sept 1|
Bibliographical noteFunding Information:
This research was supported by the LG display . This work was also supported by Institute of BioMed-IT, Energy-IT and Smart-IT Technology (BEST) , a Brain Korea 21 plus program, Yonsei University.
© 2016 Elsevier Ltd
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Safety, Risk, Reliability and Quality
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering