Instability of oxide thin film transistor under electrical–mechanical hybrid stress for foldable display

Dongseok Shin; Min Soo Bae; Ilgu Yun

doi:10.1016/j.microrel.2016.07.017

Instability of oxide thin film transistor under electrical–mechanical hybrid stress for foldable display

Dongseok Shin, Min Soo Bae, Ilgu Yun

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Degradation mechanism of foldable thin film transistors (TFTs) is investigated experimentally by electrical, mechanical and electrical–mechanical hybrid stress experiments. Mechanical and electrical stress environment was set for foldable TFTs and the degradation effect according to the applied stress is investigated and analyzed. Degradation mechanism model that can explain the defect generation is suggested to explain the result of electrical–mechanical hybrid stress experiment.

Original language	English
Pages (from-to)	109-112
Number of pages	4
Journal	Microelectronics Reliability
Volume	64
DOIs	https://doi.org/10.1016/j.microrel.2016.07.017
Publication status	Published - 2016 Sept 1

Bibliographical note

Funding Information:
This research was supported by the LG display . This work was also supported by Institute of BioMed-IT, Energy-IT and Smart-IT Technology (BEST) , a Brain Korea 21 plus program, Yonsei University.

Publisher Copyright:
© 2016 Elsevier Ltd

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Safety, Risk, Reliability and Quality
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.microrel.2016.07.017

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abstract = "Degradation mechanism of foldable thin film transistors (TFTs) is investigated experimentally by electrical, mechanical and electrical–mechanical hybrid stress experiments. Mechanical and electrical stress environment was set for foldable TFTs and the degradation effect according to the applied stress is investigated and analyzed. Degradation mechanism model that can explain the defect generation is suggested to explain the result of electrical–mechanical hybrid stress experiment.",

author = "Dongseok Shin and Bae, {Min Soo} and Ilgu Yun",

note = "Funding Information: This research was supported by the LG display . This work was also supported by Institute of BioMed-IT, Energy-IT and Smart-IT Technology (BEST) , a Brain Korea 21 plus program, Yonsei University. Publisher Copyright: {\textcopyright} 2016 Elsevier Ltd",

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doi = "10.1016/j.microrel.2016.07.017",

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AU - Shin, Dongseok

AU - Bae, Min Soo

AU - Yun, Ilgu

N1 - Funding Information: This research was supported by the LG display . This work was also supported by Institute of BioMed-IT, Energy-IT and Smart-IT Technology (BEST) , a Brain Korea 21 plus program, Yonsei University. Publisher Copyright: © 2016 Elsevier Ltd

PY - 2016/9/1

Y1 - 2016/9/1

N2 - Degradation mechanism of foldable thin film transistors (TFTs) is investigated experimentally by electrical, mechanical and electrical–mechanical hybrid stress experiments. Mechanical and electrical stress environment was set for foldable TFTs and the degradation effect according to the applied stress is investigated and analyzed. Degradation mechanism model that can explain the defect generation is suggested to explain the result of electrical–mechanical hybrid stress experiment.

AB - Degradation mechanism of foldable thin film transistors (TFTs) is investigated experimentally by electrical, mechanical and electrical–mechanical hybrid stress experiments. Mechanical and electrical stress environment was set for foldable TFTs and the degradation effect according to the applied stress is investigated and analyzed. Degradation mechanism model that can explain the defect generation is suggested to explain the result of electrical–mechanical hybrid stress experiment.

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JO - Microelectronics Reliability

JF - Microelectronics Reliability

ER -

Instability of oxide thin film transistor under electrical–mechanical hybrid stress for foldable display

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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