Instability of incorporated nitrogen in HfO2 films grown on strained Si0.7 Ge0.3 layers

K. B. Chung, G. Lucovsky, W. J. Lee, M. H. Cho, Hyeongtag Jeon

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The interfacial characteristics and thermal stability of nitrided HfO 2 films grown on strained Si0.7 Ge0.3 layers were investigated by medium energy ion scattering, high-resolution x-ray photoelectron spectroscopy, and near-edge x-ray absorption fine structure. N incorporation of HfO2 films grown on Si0.7 Ge 0.3 layers was strongly related to the diffusion of Si and Ge from strained Si0.7 Ge0.3 layers in the interfacial region between HfO2 films and Si0.7 Ge0.3 layers by the annealing treatment in NH3 ambient. The chemical states of SiOxNy and GeOx Ny were formed in the interfacial region by N incorporation, and SiOx Ny was dominant chemical states rather than that of GeOx Ny. However, the incorporated N was not stable, which was mostly diffused out during the postnitridation annealing in a N2 ambient. The instability of incorporated N through the additional annealing treatment extensively caused the change in the structure of HfO2.

Original languageEnglish
Article number042907
JournalApplied Physics Letters
Issue number4
Publication statusPublished - 2009

Bibliographical note

Funding Information:
This work was partially supported by the National Program for Tera-level Nanodevices of the Ministry of Education, Science and Technology as one of the 21 Century Frontier Programs.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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