Insertion of an organic interlayer for hole current enhancement in inverted organic light emitting devices

Soon Mi Park; Yoon Hak Kim; Yeonjin Yi; Hyoung Yun Oh; Jeong Won Kim

doi:10.1063/1.3478007

Insertion of an organic interlayer for hole current enhancement in inverted organic light emitting devices

Soon Mi Park, Yoon Hak Kim, Yeonjin Yi, Hyoung Yun Oh, Jeong Won Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

80 Citations (Scopus)

Abstract

We report the enhancement of hole current density in the hole transport part of an inverted top-emission organic light emitted diode by applying an organic insertion layer of 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile (HAT-CN). Poor hole transporting performance of Al/4, 4′ -bis(N -phenyl-1-naphthylamino)biphenyl (NPB)/indium tin oxide is greatly improved by the HAT-CN insertion between Al and NPB layer. The highest occupied molecular orbital level onset of the NPB bends toward Fermi level at the HAT-CN/NPB interface. This extra charge generation layer made of pure organic molecules substantially enhances hole injection from Al anode as revealed by the results of ultraviolet photoelectron spectroscopy and J-V measurement data.

Original language	English
Article number	063308
Journal	Applied Physics Letters
Volume	97
Issue number	6
DOIs	https://doi.org/10.1063/1.3478007
Publication status	Published - 2010 Aug 9

Bibliographical note

Funding Information:
This work is supported by Korea Research Council of Fundamental Science and Technology (KRCF) through the KRISS project of “Development of Advanced Industrial Metrology.”

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3478007

Cite this

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title = "Insertion of an organic interlayer for hole current enhancement in inverted organic light emitting devices",

abstract = "We report the enhancement of hole current density in the hole transport part of an inverted top-emission organic light emitted diode by applying an organic insertion layer of 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile (HAT-CN). Poor hole transporting performance of Al/4, 4′ -bis(N -phenyl-1-naphthylamino)biphenyl (NPB)/indium tin oxide is greatly improved by the HAT-CN insertion between Al and NPB layer. The highest occupied molecular orbital level onset of the NPB bends toward Fermi level at the HAT-CN/NPB interface. This extra charge generation layer made of pure organic molecules substantially enhances hole injection from Al anode as revealed by the results of ultraviolet photoelectron spectroscopy and J-V measurement data.",

author = "Park, {Soon Mi} and Kim, {Yoon Hak} and Yeonjin Yi and Oh, {Hyoung Yun} and {Won Kim}, Jeong",

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AU - Park, Soon Mi

AU - Kim, Yoon Hak

AU - Yi, Yeonjin

AU - Oh, Hyoung Yun

AU - Won Kim, Jeong

N1 - Funding Information: This work is supported by Korea Research Council of Fundamental Science and Technology (KRCF) through the KRISS project of “Development of Advanced Industrial Metrology.”

PY - 2010/8/9

Y1 - 2010/8/9

N2 - We report the enhancement of hole current density in the hole transport part of an inverted top-emission organic light emitted diode by applying an organic insertion layer of 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile (HAT-CN). Poor hole transporting performance of Al/4, 4′ -bis(N -phenyl-1-naphthylamino)biphenyl (NPB)/indium tin oxide is greatly improved by the HAT-CN insertion between Al and NPB layer. The highest occupied molecular orbital level onset of the NPB bends toward Fermi level at the HAT-CN/NPB interface. This extra charge generation layer made of pure organic molecules substantially enhances hole injection from Al anode as revealed by the results of ultraviolet photoelectron spectroscopy and J-V measurement data.

AB - We report the enhancement of hole current density in the hole transport part of an inverted top-emission organic light emitted diode by applying an organic insertion layer of 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile (HAT-CN). Poor hole transporting performance of Al/4, 4′ -bis(N -phenyl-1-naphthylamino)biphenyl (NPB)/indium tin oxide is greatly improved by the HAT-CN insertion between Al and NPB layer. The highest occupied molecular orbital level onset of the NPB bends toward Fermi level at the HAT-CN/NPB interface. This extra charge generation layer made of pure organic molecules substantially enhances hole injection from Al anode as revealed by the results of ultraviolet photoelectron spectroscopy and J-V measurement data.

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Insertion of an organic interlayer for hole current enhancement in inverted organic light emitting devices

Abstract

Bibliographical note

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