Inkjet-printed InGaZnO thin film transistor

Gun Hee Kim; Hyun Soo Kim; Hyun Soo Shin; Byun Du Ahn; Kyung Ho Kim; Hyun Jae Kim

doi:10.1016/j.tsf.2009.01.151

Inkjet-printed InGaZnO thin film transistor

Gun Hee Kim, Hyun Soo Kim, Hyun Soo Shin, Byun Du Ahn, Kyung Ho Kim, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

158 Citations (Scopus)

Abstract

We report inkjet-printed InGaZnO (IGZO) thin film transistors (TFTs). IGZO ink was prepared by dissolving indium nitrate hydrate, gallium nitrate hydrate and zinc acetate dihydrate into 2-methoxyethanol with additional stabilizers. The resulting films were inkjet-printed with a resolution of 300 dots per inch using droplets with a diameter of 40 μm, and a volume of 35 pl. The films exhibited high optical transparency in the visible range and had a polycrystalline phase of InGaO₃(ZnO)₂ after thermal annealing treatment. The chemical composition of this IGZO sample was also determined, and shown to have high stoichiometric characteristics of low oxygen deficiency. The TFTs with a conventional inverted staggered structure using inkjet-printed IGZO as an active channel layer had a field-effect mobility of ~ 0.03 cm²/Vs in saturation region and an on-to-off current ratio greater than ~ 10⁴.

Original language	English
Pages (from-to)	4007-4010
Number of pages	4
Journal	Thin Solid Films
Volume	517
Issue number	14
DOIs	https://doi.org/10.1016/j.tsf.2009.01.151
Publication status	Published - 2009 May 29

Bibliographical note

Funding Information:
This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (No. R0A-2007-000-10044-0).

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2009.01.151

Cite this

@article{1e56db9c26e340918b3b2e3fc7919dee,

title = "Inkjet-printed InGaZnO thin film transistor",

abstract = "We report inkjet-printed InGaZnO (IGZO) thin film transistors (TFTs). IGZO ink was prepared by dissolving indium nitrate hydrate, gallium nitrate hydrate and zinc acetate dihydrate into 2-methoxyethanol with additional stabilizers. The resulting films were inkjet-printed with a resolution of 300 dots per inch using droplets with a diameter of 40 μm, and a volume of 35 pl. The films exhibited high optical transparency in the visible range and had a polycrystalline phase of InGaO3(ZnO)2 after thermal annealing treatment. The chemical composition of this IGZO sample was also determined, and shown to have high stoichiometric characteristics of low oxygen deficiency. The TFTs with a conventional inverted staggered structure using inkjet-printed IGZO as an active channel layer had a field-effect mobility of ~ 0.03 cm2/Vs in saturation region and an on-to-off current ratio greater than ~ 104.",

author = "Kim, {Gun Hee} and Kim, {Hyun Soo} and Shin, {Hyun Soo} and Ahn, {Byun Du} and Kim, {Kyung Ho} and Kim, {Hyun Jae}",

note = "Funding Information: This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (No. R0A-2007-000-10044-0).",

year = "2009",

month = may,

day = "29",

doi = "10.1016/j.tsf.2009.01.151",

language = "English",

volume = "517",

pages = "4007--4010",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "14",

}

TY - JOUR

T1 - Inkjet-printed InGaZnO thin film transistor

AU - Kim, Gun Hee

AU - Kim, Hyun Soo

AU - Shin, Hyun Soo

AU - Ahn, Byun Du

AU - Kim, Kyung Ho

AU - Kim, Hyun Jae

N1 - Funding Information: This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (No. R0A-2007-000-10044-0).

PY - 2009/5/29

Y1 - 2009/5/29

N2 - We report inkjet-printed InGaZnO (IGZO) thin film transistors (TFTs). IGZO ink was prepared by dissolving indium nitrate hydrate, gallium nitrate hydrate and zinc acetate dihydrate into 2-methoxyethanol with additional stabilizers. The resulting films were inkjet-printed with a resolution of 300 dots per inch using droplets with a diameter of 40 μm, and a volume of 35 pl. The films exhibited high optical transparency in the visible range and had a polycrystalline phase of InGaO3(ZnO)2 after thermal annealing treatment. The chemical composition of this IGZO sample was also determined, and shown to have high stoichiometric characteristics of low oxygen deficiency. The TFTs with a conventional inverted staggered structure using inkjet-printed IGZO as an active channel layer had a field-effect mobility of ~ 0.03 cm2/Vs in saturation region and an on-to-off current ratio greater than ~ 104.

AB - We report inkjet-printed InGaZnO (IGZO) thin film transistors (TFTs). IGZO ink was prepared by dissolving indium nitrate hydrate, gallium nitrate hydrate and zinc acetate dihydrate into 2-methoxyethanol with additional stabilizers. The resulting films were inkjet-printed with a resolution of 300 dots per inch using droplets with a diameter of 40 μm, and a volume of 35 pl. The films exhibited high optical transparency in the visible range and had a polycrystalline phase of InGaO3(ZnO)2 after thermal annealing treatment. The chemical composition of this IGZO sample was also determined, and shown to have high stoichiometric characteristics of low oxygen deficiency. The TFTs with a conventional inverted staggered structure using inkjet-printed IGZO as an active channel layer had a field-effect mobility of ~ 0.03 cm2/Vs in saturation region and an on-to-off current ratio greater than ~ 104.

UR - http://www.scopus.com/inward/record.url?scp=65149090679&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=65149090679&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2009.01.151

DO - 10.1016/j.tsf.2009.01.151

M3 - Article

AN - SCOPUS:65149090679

SN - 0040-6090

VL - 517

SP - 4007

EP - 4010

JO - Thin Solid Films

JF - Thin Solid Films

IS - 14

ER -

Inkjet-printed InGaZnO thin film transistor

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this