Abstract
The electrical conductance characteristics due to tunneling of Au films on glass substrates as a function of deposition rate and Ar+ ion current density have been investigated by in situ measurement. The onset thickness for conductance was 8.5-29 Å lower than that obtained by other researchers due to the use of a nozzle beam in this study. The degree of agglomeration, t, attained its maximum value at a deposition rate R = 1.0 Å/s. The degree of coalescence increased with increasing deposition rate. The onset thickness for conductance decreased to a nearly linear line with increasing ion beam irradiation.
Original language | English |
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Pages (from-to) | L15-L17 |
Journal | Japanese Journal of Applied Physics |
Volume | 43 |
Issue number | 1 A/B |
DOIs | |
Publication status | Published - 2004 Jan 15 |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)