Initial growth behavior of a lead oxide thin film on ir substrates by atomic layer deposition

Hyun Ju Lee, Gun Hwan Kim, Keun Lee, Cheol Seong Hwang

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Lead oxide thin films were deposited on Ir IrO2 SiO2 Si substrates by atomic layer deposition at 200°C using lead bis(3-N,N-dimethyl-2-methyl-2- propanoxide) and H2 O as the Pb precursor and oxidant, respectively. The growth rate was 0.036 nmcycle up to a thickness of ∼1 nm but decreased to 0.011 nmcycle with further increases in thickness. Atomic force microscopy showed that the surface morphology changed slightly with film growth, but this variation cannot explain the large change in growth rate. X-ray photoelectron spectroscopy showed a distinct difference in the chemical composition [O(Pb+Ir) ratio] between the two thickness regions, which might be responsible for the large discrepancy in growth rate.

Original languageEnglish
Pages (from-to)G89-G92
JournalElectrochemical and Solid-State Letters
Issue number12
Publication statusPublished - 2007 Jan 1

All Science Journal Classification (ASJC) codes

  • General Chemical Engineering
  • General Materials Science
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering


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