Infrared spectroscopy of the interface charge in a ZnO field-effect transistor

Jooyoun Kim; Sunghoon Jung; E. J. Choi; Kitae Kim; Kimoon Lee; Seongil Im

doi:10.1063/1.3049604

Infrared spectroscopy of the interface charge in a ZnO field-effect transistor

Jooyoun Kim, Sunghoon Jung, E. J. Choi, Kitae Kim, Kimoon Lee, Seongil Im

Department of Physics

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We used far-infrared transmission spectroscopy to probe the electrostatically induced charge carriers in a ZnO field-effect transistor. The carrier absorption spectrum exhibits a non-Drude, incoherent conduction behavior at low gate-source voltages (V_GS <40 V), which evolves toward a standard Drude behavior as V_GS is increased. This change is explained successfully by a generalized Drude model. We find that the interface carriers undergo strong backscattering collisions during the channel conduction and the microscopic scattering angle changes with V_GS.

Original language	English
Article number	241902
Journal	Applied Physics Letters
Volume	93
Issue number	24
DOIs	https://doi.org/10.1063/1.3049604
Publication status	Published - 2008

Bibliographical note

Funding Information:
We thank D. Basov for useful discussions and D. Schmadel for careful reading of the manuscript. This work was supported by BK21 through the Human Resource Development for the computational physics team of the Univ. of Seoul. Seongil Im and Kitae Kim acknowledge the financial support from Brain Korea 21 Project of the Yonsei University.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3049604

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title = "Infrared spectroscopy of the interface charge in a ZnO field-effect transistor",

abstract = "We used far-infrared transmission spectroscopy to probe the electrostatically induced charge carriers in a ZnO field-effect transistor. The carrier absorption spectrum exhibits a non-Drude, incoherent conduction behavior at low gate-source voltages (VGS <40 V), which evolves toward a standard Drude behavior as VGS is increased. This change is explained successfully by a generalized Drude model. We find that the interface carriers undergo strong backscattering collisions during the channel conduction and the microscopic scattering angle changes with VGS.",

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AU - Kim, Jooyoun

AU - Jung, Sunghoon

AU - Choi, E. J.

AU - Kim, Kitae

AU - Lee, Kimoon

AU - Im, Seongil

N1 - Funding Information: We thank D. Basov for useful discussions and D. Schmadel for careful reading of the manuscript. This work was supported by BK21 through the Human Resource Development for the computational physics team of the Univ. of Seoul. Seongil Im and Kitae Kim acknowledge the financial support from Brain Korea 21 Project of the Yonsei University.

PY - 2008

Y1 - 2008

N2 - We used far-infrared transmission spectroscopy to probe the electrostatically induced charge carriers in a ZnO field-effect transistor. The carrier absorption spectrum exhibits a non-Drude, incoherent conduction behavior at low gate-source voltages (VGS <40 V), which evolves toward a standard Drude behavior as VGS is increased. This change is explained successfully by a generalized Drude model. We find that the interface carriers undergo strong backscattering collisions during the channel conduction and the microscopic scattering angle changes with VGS.

AB - We used far-infrared transmission spectroscopy to probe the electrostatically induced charge carriers in a ZnO field-effect transistor. The carrier absorption spectrum exhibits a non-Drude, incoherent conduction behavior at low gate-source voltages (VGS <40 V), which evolves toward a standard Drude behavior as VGS is increased. This change is explained successfully by a generalized Drude model. We find that the interface carriers undergo strong backscattering collisions during the channel conduction and the microscopic scattering angle changes with VGS.

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Infrared spectroscopy of the interface charge in a ZnO field-effect transistor

Abstract

Bibliographical note

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