Influence of thermal annealing ambient on Ga-doped ZnO thin films

Byung Du Ahn; Sang Hoon Oh; Choong Hee Lee; Gun Hee Kim; Hyun Jae Kim; Sang Yeol Lee

doi:10.1016/j.jcrysgro.2007.09.014

Influence of thermal annealing ambient on Ga-doped ZnO thin films

Byung Du Ahn, Sang Hoon Oh, Choong Hee Lee, Gun Hee Kim, Hyun Jae Kim, Sang Yeol Lee

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

132 Citations (Scopus)

Abstract

The effect of thermal annealing on the structural, chemical, electrical, and optical properties of Ga-doped ZnO (GZO) films was investigated in various ambients, such as oxygen, nitrogen, and forming gas (95% N₂ 5% H₂). The variation of these properties is thought to be related to the chemisorption and removal of adsorbed oxygen on the GZO film surface. The carrier concentration of the GZO films increased with heat treatment in the forming gas ambient. However, the carrier concentration of the GZO films decreased with heat treatment in oxygen and nitrogen. Annealing under forming gas, oxygen weakly absorbed on the GZO film was removed. Annealing under N- and O-rich conditions, chemisorption of oxygen was dominant. These results were clarified by comparatively analyzing the chemical states of oxygen on the surface of the GZO films.

Original language	English
Pages (from-to)	128-133
Number of pages	6
Journal	Journal of Crystal Growth
Volume	309
Issue number	2
DOIs	https://doi.org/10.1016/j.jcrysgro.2007.09.014
Publication status	Published - 2007 Dec 1

Bibliographical note

Funding Information:
This work was supported by Grant no. R01-2004-000-10195-0 (2005) from the Basic Research Program of the Korea Science & Engineering Foundation.

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2007.09.014

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title = "Influence of thermal annealing ambient on Ga-doped ZnO thin films",

abstract = "The effect of thermal annealing on the structural, chemical, electrical, and optical properties of Ga-doped ZnO (GZO) films was investigated in various ambients, such as oxygen, nitrogen, and forming gas (95% N2 5% H2). The variation of these properties is thought to be related to the chemisorption and removal of adsorbed oxygen on the GZO film surface. The carrier concentration of the GZO films increased with heat treatment in the forming gas ambient. However, the carrier concentration of the GZO films decreased with heat treatment in oxygen and nitrogen. Annealing under forming gas, oxygen weakly absorbed on the GZO film was removed. Annealing under N- and O-rich conditions, chemisorption of oxygen was dominant. These results were clarified by comparatively analyzing the chemical states of oxygen on the surface of the GZO films.",

author = "{Du Ahn}, Byung and {Hoon Oh}, Sang and {Hee Lee}, Choong and {Hee Kim}, Gun and {Jae Kim}, Hyun and {Yeol Lee}, Sang",

note = "Funding Information: This work was supported by Grant no. R01-2004-000-10195-0 (2005) from the Basic Research Program of the Korea Science & Engineering Foundation.",

year = "2007",

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doi = "10.1016/j.jcrysgro.2007.09.014",

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T1 - Influence of thermal annealing ambient on Ga-doped ZnO thin films

AU - Du Ahn, Byung

AU - Hoon Oh, Sang

AU - Hee Lee, Choong

AU - Hee Kim, Gun

AU - Jae Kim, Hyun

AU - Yeol Lee, Sang

N1 - Funding Information: This work was supported by Grant no. R01-2004-000-10195-0 (2005) from the Basic Research Program of the Korea Science & Engineering Foundation.

PY - 2007/12/1

Y1 - 2007/12/1

N2 - The effect of thermal annealing on the structural, chemical, electrical, and optical properties of Ga-doped ZnO (GZO) films was investigated in various ambients, such as oxygen, nitrogen, and forming gas (95% N2 5% H2). The variation of these properties is thought to be related to the chemisorption and removal of adsorbed oxygen on the GZO film surface. The carrier concentration of the GZO films increased with heat treatment in the forming gas ambient. However, the carrier concentration of the GZO films decreased with heat treatment in oxygen and nitrogen. Annealing under forming gas, oxygen weakly absorbed on the GZO film was removed. Annealing under N- and O-rich conditions, chemisorption of oxygen was dominant. These results were clarified by comparatively analyzing the chemical states of oxygen on the surface of the GZO films.

AB - The effect of thermal annealing on the structural, chemical, electrical, and optical properties of Ga-doped ZnO (GZO) films was investigated in various ambients, such as oxygen, nitrogen, and forming gas (95% N2 5% H2). The variation of these properties is thought to be related to the chemisorption and removal of adsorbed oxygen on the GZO film surface. The carrier concentration of the GZO films increased with heat treatment in the forming gas ambient. However, the carrier concentration of the GZO films decreased with heat treatment in oxygen and nitrogen. Annealing under forming gas, oxygen weakly absorbed on the GZO film was removed. Annealing under N- and O-rich conditions, chemisorption of oxygen was dominant. These results were clarified by comparatively analyzing the chemical states of oxygen on the surface of the GZO films.

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JO - Journal of Crystal Growth

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Influence of thermal annealing ambient on Ga-doped ZnO thin films

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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