Abstract
The mobility of pentacene thin-film transistors (TFTs) is correlated with the dielectric properties of their insulators. We varied the dielectric properties of the poly(4-vinylphenol) insulators of such TFTs by changing the molar ratio of the prepolymer/cross-linking agent while keeping the surface potential of the insulator surface constant. It was found that the field-effect mobility of the pentacene TFTs increases with increases in the dielectric constant of the insulators. A small increase in the dielectric constant of the insulator (a 20% increase, 3.6-4.3) was found to result in a dramatic increase in the field-effect mobility of pentacene TFTs by a factor of 3 (0.26 to 0.81 cm2 V s).
| Original language | English |
|---|---|
| Article number | 152105 |
| Pages (from-to) | 1-3 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 87 |
| Issue number | 15 |
| DOIs | |
| Publication status | Published - 2005 Oct 10 |
Bibliographical note
Funding Information:This work was supported by the National Research Laboratory Program of the Ministry of Science and Technology of Korea, a grant (F0004022) from the Information Display R&D Center under the 21st Century Frontier R&D Program and the Regional R&D Cluster Project designated by the Ministry of Commerce, Industry and Energy of Korea, and the BK21 Program of the Ministry of Education and Human Resources Development of Korea. We also thank the Pohang Acceleratoty Laboratory for providing the synchrotron radiation source at the 3C2 and 8C1 beam line.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)