A solution-processable organosiloxane-based organic-inorganic hybrid gate dielectric layer for application in organic thin-film transistors has been synthesized by a sol-gel process. In the sol-gel derived hybrid film, owing to an incomplete condensation reaction, silanol groups serve as functional groups of the inorganic siloxane backbone. In order to investigate the influence of the silanol groups on the electrical performance of transistors with organosiloxane-based dielectrics, transistors employing hybrid dielectrics with different amounts of the silanol group were prepared and electrical performance parameters such as off-current, threshold voltage, field-effect mobility, and hysteresis were analysed.
All Science Journal Classification (ASJC) codes
- General Chemistry
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering