Influence of oxygen on the microstructural growth of SiC nanowires

Yoo Youl Choi, Jun Gyu Kim, Si Jung Park, Doo Jin Choi

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


We examined the influence of oxygen (O 2) on the growth of silicon carbide nanowires (SiC NWs) by chemical vapor deposition (CVD), because vacuum environments are susceptible to O 2 leakage inflow. We investigated the effect of increasing the O 2 flow rate on the microstructural changes of SiC NWs and then evaluated the effect at various growth temperatures. The O 2 content was highly related to the density of NWs, which continued to increase actively at higher temperatures. High-resolution transmission electron microscopy (HR-TEM) revealed that NWs change from a single-crystalline phase to a polycrystalline phase and then to a SiC/SiO 2 core-shell structure.

Original languageEnglish
Pages (from-to)138-142
Number of pages5
JournalChemical Physics Letters
Publication statusPublished - 2012 Apr 2

Bibliographical note

Funding Information:
This research was supported by the Agency for Defense Development (ADD) .

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy
  • Physical and Theoretical Chemistry


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