Influence of oxide thinning by selective etching process on solution processed indium zinc oxide thin film transistor

Jae Won Na, Hee Jun Kim, Jin Hyeok Lee, Hyun Jae Kim

Research output: Contribution to journalConference articlepeer-review

Abstract

Conductive indium zinc oxide (IZO) film was fabricated using solution process. After source/drain deposition on the IZO film, we immersed the IZO thin film transistor (TFT) into acetic acid solution to selectively etch the area between source and drain. By this selective etching, the IZO TFT showed proper transfer characteristics.

Original languageEnglish
Pages (from-to)1165-1167
Number of pages3
JournalDigest of Technical Papers - SID International Symposium
Volume47
Issue number1
DOIs
Publication statusPublished - 2016
Event54th Annual SID Symposium, Seminar, and Exhibition 2016, Display Week 2016 - San Francisco, United States
Duration: 2016 May 222016 May 27

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. 2011-0028819).

Publisher Copyright:
© (2016) by SID-the Society for Information Display. All rights reserved.

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint

Dive into the research topics of 'Influence of oxide thinning by selective etching process on solution processed indium zinc oxide thin film transistor'. Together they form a unique fingerprint.

Cite this