Abstract
Conductive indium zinc oxide (IZO) film was fabricated using solution process. After source/drain deposition on the IZO film, we immersed the IZO thin film transistor (TFT) into acetic acid solution to selectively etch the area between source and drain. By this selective etching, the IZO TFT showed proper transfer characteristics.
Original language | English |
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Pages (from-to) | 1165-1167 |
Number of pages | 3 |
Journal | Digest of Technical Papers - SID International Symposium |
Volume | 47 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2016 |
Event | 54th Annual SID Symposium, Seminar, and Exhibition 2016, Display Week 2016 - San Francisco, United States Duration: 2016 May 22 → 2016 May 27 |
Bibliographical note
Funding Information:This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. 2011-0028819).
Publisher Copyright:
© (2016) by SID-the Society for Information Display. All rights reserved.
All Science Journal Classification (ASJC) codes
- Engineering(all)