Influence of lattice relaxation on the properties of ZnSe/ZnS single quantum wells by MOVPE

S. K. Chang, C. D. Lee, S. I. Min, E. D. Sim, Y. S. Joh

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5 Citations (Scopus)


The growth of ZnSe/ZnS single quantum well (SQW) structures was performed by atomic layer epitaxy (ALE) in an atmospheric pressure metalorganic vapour phase epitaxy (MOVPE) system. Through the photoluminescence measurement of ZnSe/ZnS SQWs, we observed clear shifts of the excitons to higher energies with decreasing well width, which demonstrate effects of strain and quantum confinement. Transition energies were calculated considering (i) a simple square well potential and (ii) a parabolic potential model under the action of strain effects. From comparison of the exciton energy with the calculated transition energies, we conclude that lattice relaxation induced interdiffusion occurs as the well width becomes thicker than the critical thickness.

Original languageEnglish
Pages (from-to)112-116
Number of pages5
JournalJournal of Crystal Growth
Issue number1-4
Publication statusPublished - 1996 Feb

Bibliographical note

Funding Information:
This work was supported in part by KOSEF through SPRC, 1995 and in part by the Basic Science Research Institute Program, Ministry of Education of Korea, 1995, Project No. 2424.

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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