Influence of illumination on the negative-bias stability of transparent hafniumindiumzinc oxide thin-film transistors

Joon Seok Park; Tae Sang Kim; Kyoung Seok Son; Ji Sim Jung; Kwang Hee Lee; Jang Yeon Kwon; Bonwon Koo; Sangyoon Lee

doi:10.1109/LED.2010.2043050

Influence of illumination on the negative-bias stability of transparent hafniumindiumzinc oxide thin-film transistors

Joon Seok Park, Tae Sang Kim, Kyoung Seok Son, Ji Sim Jung, Kwang Hee Lee, Jang Yeon Kwon, Bonwon Koo, Sangyoon Lee

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

58 Citations (Scopus)

Abstract

The stability of transparent hafniumindiumzinc oxide (HIZO) thin-film transistors (TFTs) was investigated under negative-bias stress conditions. TFTs that incorporate transparent electrode materials such as indiumtin oxide or indiumzinc oxide were studied, and the bias stress experiments showed that transparent TFTs undergo severe degradation (negative shift in threshold voltage V_T) with simultaneous exposure to white light, in comparison with the results obtained in dark. The time evolution of V_T indicates that the deterioration under illumination occurs mainly by the trapping of photogenerated carriers near the HIZO/dielectric interface.

Original language	English
Article number	5438732
Pages (from-to)	440-442
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	5
DOIs	https://doi.org/10.1109/LED.2010.2043050
Publication status	Published - 2010 May

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2010.2043050

Cite this

@article{584f87474e96405092f565ad9da3cae5,

title = "Influence of illumination on the negative-bias stability of transparent hafniumindiumzinc oxide thin-film transistors",

abstract = "The stability of transparent hafniumindiumzinc oxide (HIZO) thin-film transistors (TFTs) was investigated under negative-bias stress conditions. TFTs that incorporate transparent electrode materials such as indiumtin oxide or indiumzinc oxide were studied, and the bias stress experiments showed that transparent TFTs undergo severe degradation (negative shift in threshold voltage VT) with simultaneous exposure to white light, in comparison with the results obtained in dark. The time evolution of VT indicates that the deterioration under illumination occurs mainly by the trapping of photogenerated carriers near the HIZO/dielectric interface.",

author = "Park, {Joon Seok} and Kim, {Tae Sang} and Son, {Kyoung Seok} and Jung, {Ji Sim} and Lee, {Kwang Hee} and Kwon, {Jang Yeon} and Bonwon Koo and Sangyoon Lee",

year = "2010",

month = may,

doi = "10.1109/LED.2010.2043050",

language = "English",

volume = "31",

pages = "440--442",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - Influence of illumination on the negative-bias stability of transparent hafniumindiumzinc oxide thin-film transistors

AU - Park, Joon Seok

AU - Kim, Tae Sang

AU - Son, Kyoung Seok

AU - Jung, Ji Sim

AU - Lee, Kwang Hee

AU - Kwon, Jang Yeon

AU - Koo, Bonwon

AU - Lee, Sangyoon

PY - 2010/5

Y1 - 2010/5

N2 - The stability of transparent hafniumindiumzinc oxide (HIZO) thin-film transistors (TFTs) was investigated under negative-bias stress conditions. TFTs that incorporate transparent electrode materials such as indiumtin oxide or indiumzinc oxide were studied, and the bias stress experiments showed that transparent TFTs undergo severe degradation (negative shift in threshold voltage VT) with simultaneous exposure to white light, in comparison with the results obtained in dark. The time evolution of VT indicates that the deterioration under illumination occurs mainly by the trapping of photogenerated carriers near the HIZO/dielectric interface.

AB - The stability of transparent hafniumindiumzinc oxide (HIZO) thin-film transistors (TFTs) was investigated under negative-bias stress conditions. TFTs that incorporate transparent electrode materials such as indiumtin oxide or indiumzinc oxide were studied, and the bias stress experiments showed that transparent TFTs undergo severe degradation (negative shift in threshold voltage VT) with simultaneous exposure to white light, in comparison with the results obtained in dark. The time evolution of VT indicates that the deterioration under illumination occurs mainly by the trapping of photogenerated carriers near the HIZO/dielectric interface.

UR - http://www.scopus.com/inward/record.url?scp=77951877430&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77951877430&partnerID=8YFLogxK

U2 - 10.1109/LED.2010.2043050

DO - 10.1109/LED.2010.2043050

M3 - Article

AN - SCOPUS:77951877430

SN - 0741-3106

VL - 31

SP - 440

EP - 442

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 5

M1 - 5438732

ER -

Influence of illumination on the negative-bias stability of transparent hafniumindiumzinc oxide thin-film transistors

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this