Abstract
In order to investigate the effect of Ge addition to the Cu matrix on the microstructure and the critical current density, four kinds of internal tin processed Nb3Sn strands with pure Cu and Cu - 0.2, 0.4, 0.6 wt% Ge alloys were drawn to 0.8 mm diameter. The microstructure and critical current of internal tin processed Nb3Sn wires that were heat treated at temperatures ranging from 680°C for 240 h were investigated. The Ge addition to the matrix did not make workability worse. A Ge rich layer in the Cu-Ge matrix suppressed the growth of the Nb3Sn layer and promoted grain coarsening. The greater the Ge content in the matrix, the lower the net Jc result after Nb3Sn reaction heat treatment. There was no significant variation in Jc observed with heat treatment temperature ranging from 680°C to 740°C.
| Original language | English |
|---|---|
| Pages (from-to) | 3565-3568 |
| Number of pages | 4 |
| Journal | IEEE Transactions on Applied Superconductivity |
| Volume | 11 |
| Issue number | 1 III |
| DOIs | |
| Publication status | Published - 2001 Mar |
| Event | 2000 Applied Superconductivity Conference - Virginia Beach, VA, United States Duration: 2000 Sept 17 → 2000 Sept 22 |
Bibliographical note
Funding Information:Manuscript received September 18, 2000. This work was supported in part by the KSTAR project (Ministry of Science and Technology). D. W. Ha is with the Korea Electrotechnology Research Institute, Changwon, Korea (telephone: t82-5.5-280-1653, e-mail: dwha @keri.re.kr). S. S Oh, H. S. Ha, N. J. Lee, R. K. KO, Y. K. Kwon and K. S. Ryu are with the Korea Electrotechnology Research Institute, Changwon, Korea. Hong-koo Baik is with the Department of Metallurgical Engineering, Yonsei University, Seoul, Korea (e-mail: thinfilm@yonsei.ac.kr).
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering