Influence of electrode modification by Ar+ ion beam upon passivation and electrical characteristics in organic light-emitting diodes

Soon Moon Jeong; Won Hoi Koo; Sang Hun Choi; Sung Jin Jo; Hong Koo Baik; Se Jong Lee; Kie Moon Song

doi:10.1557/JMR.2005.0004

Influence of electrode modification by Ar⁺ ion beam upon passivation and electrical characteristics in organic light-emitting diodes

Soon Moon Jeong, Won Hoi Koo, Sang Hun Choi, Sung Jin Jo, Hong Koo Baik, Se Jong Lee, Kie Moon Song

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Ion-beam-assisted deposition (IBAD) was used for cathode preparation in organic light-emitting diodes to fabricate dense electrode. Dark spot growth rate was decreased by employing the IBAD process due to a highly packed aluminum structure inhibiting the permeation of H₂O and O₂. However, undesirable leakage current was generated because energetic particles of Al assisted by Ar⁺ ion may damage the organic material resulting in reduction of contact resistance. The decrease of contact resistance in the IBAD device may be caused by large contact area, increase of density of states, and Li diffusion to phenyl-substituted poly-p- phenylene vinylene.

Original language	English
Pages (from-to)	81-92
Number of pages	12
Journal	Journal of Materials Research
Volume	20
Issue number	1
DOIs	https://doi.org/10.1557/JMR.2005.0004
Publication status	Published - 2005 Jan

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Influence of electrode modification by Ar+ ion beam upon passivation and electrical characteristics in organic light-emitting diodes",

abstract = "Ion-beam-assisted deposition (IBAD) was used for cathode preparation in organic light-emitting diodes to fabricate dense electrode. Dark spot growth rate was decreased by employing the IBAD process due to a highly packed aluminum structure inhibiting the permeation of H2O and O2. However, undesirable leakage current was generated because energetic particles of Al assisted by Ar+ ion may damage the organic material resulting in reduction of contact resistance. The decrease of contact resistance in the IBAD device may be caused by large contact area, increase of density of states, and Li diffusion to phenyl-substituted poly-p- phenylene vinylene.",

author = "Jeong, {Soon Moon} and Koo, {Won Hoi} and Choi, {Sang Hun} and Jo, {Sung Jin} and Baik, {Hong Koo} and Lee, {Se Jong} and Song, {Kie Moon}",

year = "2005",

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AU - Jeong, Soon Moon

AU - Koo, Won Hoi

AU - Choi, Sang Hun

AU - Jo, Sung Jin

AU - Baik, Hong Koo

AU - Lee, Se Jong

AU - Song, Kie Moon

PY - 2005/1

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N2 - Ion-beam-assisted deposition (IBAD) was used for cathode preparation in organic light-emitting diodes to fabricate dense electrode. Dark spot growth rate was decreased by employing the IBAD process due to a highly packed aluminum structure inhibiting the permeation of H2O and O2. However, undesirable leakage current was generated because energetic particles of Al assisted by Ar+ ion may damage the organic material resulting in reduction of contact resistance. The decrease of contact resistance in the IBAD device may be caused by large contact area, increase of density of states, and Li diffusion to phenyl-substituted poly-p- phenylene vinylene.

AB - Ion-beam-assisted deposition (IBAD) was used for cathode preparation in organic light-emitting diodes to fabricate dense electrode. Dark spot growth rate was decreased by employing the IBAD process due to a highly packed aluminum structure inhibiting the permeation of H2O and O2. However, undesirable leakage current was generated because energetic particles of Al assisted by Ar+ ion may damage the organic material resulting in reduction of contact resistance. The decrease of contact resistance in the IBAD device may be caused by large contact area, increase of density of states, and Li diffusion to phenyl-substituted poly-p- phenylene vinylene.

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Influence of electrode modification by Ar⁺ ion beam upon passivation and electrical characteristics in organic light-emitting diodes

Abstract

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