Influence of Annealing on Solution-Processed Indium Oxide Thin-Film Transistors under Ambient Air and Wet Conditions

Bo Sung Kim; Hyun Jae Kim

doi:10.1109/TED.2016.2591622

Influence of Annealing on Solution-Processed Indium Oxide Thin-Film Transistors under Ambient Air and Wet Conditions

Bo Sung Kim, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The effect of annealing on solution-processed indium oxide (In₂O₃) films was investigated under ambient air and wet conditions at 250 °C, 300 °C, and 350 °C, respectively. The air-Annealed films exhibited excellent thin-film transistor characteristics including field-effect mobility of 0.11-3.53 cm²/Vs and subthreshold slope of 0.28-0.36 V/dec. Whereas the wet-Annealed films showed a conductor-like behavior due to >100 times higher carrier concentration than the air-Annealed films. The results of X-ray photoelectron spectroscopy supported the decrease of hydroxyl groups in the In₂O₃ films by wet-Annealing, reducing their electron trap states and leading to more charge carriers.

Original language	English
Article number	7548124
Pages (from-to)	3558-3561
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	63
Issue number	9
DOIs	https://doi.org/10.1109/TED.2016.2591622
Publication status	Published - 2016 Sept

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea within the Ministry of Science, ICT and Future Planning through the Korean Government under Grant 2011- 0028819.

Publisher Copyright:
© 1963-2012 IEEE.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TED.2016.2591622

Cite this

@article{5319f56ad2f34b3ea041543d6003e706,

title = "Influence of Annealing on Solution-Processed Indium Oxide Thin-Film Transistors under Ambient Air and Wet Conditions",

abstract = "The effect of annealing on solution-processed indium oxide (In2O3) films was investigated under ambient air and wet conditions at 250 °C, 300 °C, and 350 °C, respectively. The air-Annealed films exhibited excellent thin-film transistor characteristics including field-effect mobility of 0.11-3.53 cm2/Vs and subthreshold slope of 0.28-0.36 V/dec. Whereas the wet-Annealed films showed a conductor-like behavior due to >100 times higher carrier concentration than the air-Annealed films. The results of X-ray photoelectron spectroscopy supported the decrease of hydroxyl groups in the In2O3 films by wet-Annealing, reducing their electron trap states and leading to more charge carriers.",

author = "Kim, {Bo Sung} and Kim, {Hyun Jae}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea within the Ministry of Science, ICT and Future Planning through the Korean Government under Grant 2011- 0028819. Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2016",

month = sep,

doi = "10.1109/TED.2016.2591622",

language = "English",

volume = "63",

pages = "3558--3561",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - Influence of Annealing on Solution-Processed Indium Oxide Thin-Film Transistors under Ambient Air and Wet Conditions

AU - Kim, Bo Sung

AU - Kim, Hyun Jae

N1 - Funding Information: This work was supported by the National Research Foundation of Korea within the Ministry of Science, ICT and Future Planning through the Korean Government under Grant 2011- 0028819. Publisher Copyright: © 1963-2012 IEEE.

PY - 2016/9

Y1 - 2016/9

N2 - The effect of annealing on solution-processed indium oxide (In2O3) films was investigated under ambient air and wet conditions at 250 °C, 300 °C, and 350 °C, respectively. The air-Annealed films exhibited excellent thin-film transistor characteristics including field-effect mobility of 0.11-3.53 cm2/Vs and subthreshold slope of 0.28-0.36 V/dec. Whereas the wet-Annealed films showed a conductor-like behavior due to >100 times higher carrier concentration than the air-Annealed films. The results of X-ray photoelectron spectroscopy supported the decrease of hydroxyl groups in the In2O3 films by wet-Annealing, reducing their electron trap states and leading to more charge carriers.

AB - The effect of annealing on solution-processed indium oxide (In2O3) films was investigated under ambient air and wet conditions at 250 °C, 300 °C, and 350 °C, respectively. The air-Annealed films exhibited excellent thin-film transistor characteristics including field-effect mobility of 0.11-3.53 cm2/Vs and subthreshold slope of 0.28-0.36 V/dec. Whereas the wet-Annealed films showed a conductor-like behavior due to >100 times higher carrier concentration than the air-Annealed films. The results of X-ray photoelectron spectroscopy supported the decrease of hydroxyl groups in the In2O3 films by wet-Annealing, reducing their electron trap states and leading to more charge carriers.

UR - http://www.scopus.com/inward/record.url?scp=84984914541&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84984914541&partnerID=8YFLogxK

U2 - 10.1109/TED.2016.2591622

DO - 10.1109/TED.2016.2591622

M3 - Article

AN - SCOPUS:84984914541

SN - 0018-9383

VL - 63

SP - 3558

EP - 3561

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 9

M1 - 7548124

ER -

Influence of Annealing on Solution-Processed Indium Oxide Thin-Film Transistors under Ambient Air and Wet Conditions

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this