Indium oxide thin-film transistors fabricated by room temperature rf-magnetron sputtering

J. H. Noh, S. Y. Ryu, C. S. Kim, S. J. Jo, H. S. Hwang, H. K. Baik

Research output: Contribution to conferencePaperpeer-review

2 Citations (Scopus)


We have fabricated a bottom-gate In2O3 TFT with high mobility using rf magnetron sputtering at room temperature. Device shows an average field effect mobility of 12.3 Cm2V1s-1, and sharp on-fo-off transition with about 7 orders of magnitude. Adopting our bottom-gate In2O3 TFT, a load-resistance inverter was set up and good dynamic operation has been demonstrated.

Original languageEnglish
Number of pages2
Publication statusPublished - 2007
Event14th International Display Workshops, IDW '07 - Sapporo, Japan
Duration: 2007 Dec 52007 Dec 5


Other14th International Display Workshops, IDW '07

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging
  • Atomic and Molecular Physics, and Optics


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