Abstract
We report a visible light phototransistor based on amorphous indium gallium zinc oxide (a-IGZO) by stacking hydrogen doped oxide absorption layer. The absorption layer was fabricated by sputter process with mixture of Ar and H2 plasma conditions, so it is composed of hydrogen-incorporated a-IGZO (a-IGZO:H). The absorption layer could absorb visible light due to increase in sub-gap states via hydrogen plasma doping. As a result, a-IGZO phototransistor with hydrogen doped absorption layer exhibits high photoresponsivity of 678.78 A/W, photosensitivity of 2.98×106, and 5.81×1011 Jones of detectivity under green light (532 nm, 5mW).
| Original language | English |
|---|---|
| Title of host publication | Digest of Technical Papers - SID International Symposium |
| Publisher | Blackwell Publishing Ltd. |
| Pages | 1280-1283 |
| Number of pages | 4 |
| Edition | 1 |
| ISBN (Print) | 9781510867659, 9781510867659, 9781510867659 |
| DOIs | |
| Publication status | Published - 2018 |
| Event | SID Symposium, Seminar, and Exhibition 2018, Display Week 2018 - Los Angeles, United States Duration: 2018 May 20 → 2018 May 25 |
Publication series
| Name | Digest of Technical Papers - SID International Symposium |
|---|---|
| Number | 1 |
| Volume | 49 |
| ISSN (Print) | 0097-966X |
| ISSN (Electronic) | 2168-0159 |
Other
| Other | SID Symposium, Seminar, and Exhibition 2018, Display Week 2018 |
|---|---|
| Country/Territory | United States |
| City | Los Angeles |
| Period | 18/5/20 → 18/5/25 |
Bibliographical note
Funding Information:This work was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korea government (MSIT) (no. 2017R1A2B3008719).
Publisher Copyright:
© 2018, Blackwell Publishing Ltd. All rights reserved.
All Science Journal Classification (ASJC) codes
- Engineering(all)