Indirect-to-Direct Band Gap Transition of Si Nanosheets: Effect of Biaxial Strain

Byung Hyun Kim; Mina Park; Gyubong Kim; Kersti Hermansson; Peter Broqvist; Heon Jin Choi; Kwang Ryeol Lee

doi:10.1021/acs.jpcc.8b02239

Indirect-to-Direct Band Gap Transition of Si Nanosheets: Effect of Biaxial Strain

Byung Hyun Kim, Mina Park, Gyubong Kim, Kersti Hermansson, Peter Broqvist, Heon Jin Choi, Kwang Ryeol Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The effect of biaxial strain on the band structure of two-dimensional silicon nanosheets (Si NSs) with (111), (110), and (001) exposed surfaces was investigated by means of density functional theory calculations. For all the considered Si NSs, an indirect-to-direct band gap transition occurs as the lateral dimensions of Si NSs increase; that is, increasing lateral biaxial strain from compressive to tensile always enhances the direct band gap characteristics. Further analysis revealed the mechanism of the transition which is caused by preferential shifts of the conduction band edge at a specific k-point because of their bond characteristics. Our results explain a photoluminescence result of the (111) Si NSs [U. Kim et al., ACS Nano 2011, 5, 2176-2181] in terms of the plausible tensile strain imposed in the unoxidized inner layer by surface oxidation.

Original language	English
Pages (from-to)	15297-15303
Number of pages	7
Journal	Journal of Physical Chemistry C
Volume	122
Issue number	27
DOIs	https://doi.org/10.1021/acs.jpcc.8b02239
Publication status	Published - 2018 Jul 12

Bibliographical note

Funding Information:
B.-H.K., M.P., G.K. and K.-R.L. acknowledge funding from the Nano Materials Development Program (2016M3A7B4025402). Grants from the National Research Foundation of Korea (NRF, Grant No. 2017K2A9A2A12000322) and the Swedish Foundation for International Cooperation in Research and Higher Education (STINT, Grant No. KO2016-6901) within their joint Korea-Sweden Research Cooperation program are gratefully acknowledged by B.-H.K. and K.-R.L. on the Korean side, and K.H. and P.B. on the Swedish side. This research was also funded by the Research and Development Program of Korea Institute of Energy Research (KIER) (B8-2453). The calculations were performed on resources provided by the Swedish National Infrastructure for Computing (SNIC) at UPPMAX and NSC.

Publisher Copyright:
© Copyright 2018 American Chemical Society.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Energy(all)
Physical and Theoretical Chemistry
Surfaces, Coatings and Films

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10.1021/acs.jpcc.8b02239

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title = "Indirect-to-Direct Band Gap Transition of Si Nanosheets: Effect of Biaxial Strain",

abstract = "The effect of biaxial strain on the band structure of two-dimensional silicon nanosheets (Si NSs) with (111), (110), and (001) exposed surfaces was investigated by means of density functional theory calculations. For all the considered Si NSs, an indirect-to-direct band gap transition occurs as the lateral dimensions of Si NSs increase; that is, increasing lateral biaxial strain from compressive to tensile always enhances the direct band gap characteristics. Further analysis revealed the mechanism of the transition which is caused by preferential shifts of the conduction band edge at a specific k-point because of their bond characteristics. Our results explain a photoluminescence result of the (111) Si NSs [U. Kim et al., ACS Nano 2011, 5, 2176-2181] in terms of the plausible tensile strain imposed in the unoxidized inner layer by surface oxidation.",

author = "Kim, {Byung Hyun} and Mina Park and Gyubong Kim and Kersti Hermansson and Peter Broqvist and Choi, {Heon Jin} and Lee, {Kwang Ryeol}",

note = "Funding Information: B.-H.K., M.P., G.K. and K.-R.L. acknowledge funding from the Nano Materials Development Program (2016M3A7B4025402). Grants from the National Research Foundation of Korea (NRF, Grant No. 2017K2A9A2A12000322) and the Swedish Foundation for International Cooperation in Research and Higher Education (STINT, Grant No. KO2016-6901) within their joint Korea-Sweden Research Cooperation program are gratefully acknowledged by B.-H.K. and K.-R.L. on the Korean side, and K.H. and P.B. on the Swedish side. This research was also funded by the Research and Development Program of Korea Institute of Energy Research (KIER) (B8-2453). The calculations were performed on resources provided by the Swedish National Infrastructure for Computing (SNIC) at UPPMAX and NSC. Publisher Copyright: {\textcopyright} Copyright 2018 American Chemical Society.",

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AU - Choi, Heon Jin

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N2 - The effect of biaxial strain on the band structure of two-dimensional silicon nanosheets (Si NSs) with (111), (110), and (001) exposed surfaces was investigated by means of density functional theory calculations. For all the considered Si NSs, an indirect-to-direct band gap transition occurs as the lateral dimensions of Si NSs increase; that is, increasing lateral biaxial strain from compressive to tensile always enhances the direct band gap characteristics. Further analysis revealed the mechanism of the transition which is caused by preferential shifts of the conduction band edge at a specific k-point because of their bond characteristics. Our results explain a photoluminescence result of the (111) Si NSs [U. Kim et al., ACS Nano 2011, 5, 2176-2181] in terms of the plausible tensile strain imposed in the unoxidized inner layer by surface oxidation.

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Indirect-to-Direct Band Gap Transition of Si Nanosheets: Effect of Biaxial Strain

Abstract

Bibliographical note

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