Incorporation of SiO 2 for the band alignment control of Gd 2 O 3 /n-GaAs(0 0 1) structure

Jun Kyu Yang, Hyung Ho Park

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)


Band alignment of Gd 2 O 3 gate oxide films on n-GaAs(0 0 1) was controlled by the incorporation of SiO 2 . The photoelectron binding energy shifts in Gd 2 SiO 5 film could be interpreted with relative electronegativity of second nearest neighbor element. The surface and interface morphology of Gd 2 SiO 5 /n-GaAs structure was smooth due to the absence of crystalline phase. Energy band gaps were estimated as ∼5.8 and 6.6 eV for Gd 2 O 3 and Gd 2 SiO 5 , respectively, by combining photoemission with absorption spectra. A decrease of leakage current density and a saturated accumulation capacitance indicate an enhanced band offset and small roughness in Gd 2 SiO 5 /n-GaAs system.

Original languageEnglish
Pages (from-to)293-296
Number of pages4
JournalApplied Surface Science
Issue number1-4
Publication statusPublished - 2005 May 15
Event12th International Conference on Solid Films and Surfaces - Hammatsu, Japan
Duration: 2004 Jun 212004 Jun 25

Bibliographical note

Funding Information:
This work was supported by Korea Research Foundation Grant (KRF-2003-041-D00375). The experiments at PLS were supported in part by MOST and POSTECH.

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • Condensed Matter Physics
  • General Physics and Astronomy
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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