In0.7Ga0.3As quantum well MOSFETs with Al 2O3/HfO2 toward subthreshold swing of ∼60mV/dec

Tae Woo Kim; Donghyi Koh; Hyukmin Kwon; Chan Soo Shin; Won Kyu Park; Seung Heon Shin; Youngdae Cho; Dae Hong Ko; Richard J.W. Hill; Witek P. Maszara; Paul D. Kirsch; Dae Hyun Kim

doi:10.7567/APEX.7.074201

In_0.7Ga_0.3As quantum well MOSFETs with Al ₂O₃/HfO₂ toward subthreshold swing of ∼60mV/dec

Tae Woo Kim, Donghyi Koh, Hyukmin Kwon, Chan Soo Shin, Won Kyu Park, Seung Heon Shin, Youngdae Cho, Dae Hong Ko, Richard J.W. Hill, Witek P. Maszara, Paul D. Kirsch, Dae Hyun Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We have successfully demonstrated In_0.7Ga_0.3As quantum well (QW) MOSFETs with Al₂O₃/HfO₂ toward a subthreshold swing of ∼60mV/decade. The fabricated In _0.7Ga_0.3As QW MOSFET with L_g = 5 μm exhibits an excellent subthreshold swing of 69mV/dec and a drain-induced barrier lowering (DIBL) of less than 10mV/V at V_DS = 0.5V with EOT ∼0.8 nm. On the basis of measured C-V and I-V data, we extracted the effective mobility (μ_n,eff) from our long-channel InGaAs QW MOSFET, yielding an excellent μ_n,eff of approximately 3,400cm²V ^-1 s^-1 at 300 K.

Original language	English
Article number	074201
Journal	Applied Physics Express
Volume	7
Issue number	7
DOIs	https://doi.org/10.7567/APEX.7.074201
Publication status	Published - 2014 Jul

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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@article{a09764ff7de3458a8bf5ec76e3f4471e,

title = "In0.7Ga0.3As quantum well MOSFETs with Al 2O3/HfO2 toward subthreshold swing of ∼60mV/dec",

abstract = "We have successfully demonstrated In0.7Ga0.3As quantum well (QW) MOSFETs with Al2O3/HfO2 toward a subthreshold swing of ∼60mV/decade. The fabricated In 0.7Ga0.3As QW MOSFET with Lg = 5 μm exhibits an excellent subthreshold swing of 69mV/dec and a drain-induced barrier lowering (DIBL) of less than 10mV/V at VDS = 0.5V with EOT ∼0.8 nm. On the basis of measured C-V and I-V data, we extracted the effective mobility (μn,eff) from our long-channel InGaAs QW MOSFET, yielding an excellent μn,eff of approximately 3,400cm2V -1 s-1 at 300 K.",

author = "Kim, {Tae Woo} and Donghyi Koh and Hyukmin Kwon and Shin, {Chan Soo} and Park, {Won Kyu} and Shin, {Seung Heon} and Youngdae Cho and Ko, {Dae Hong} and Hill, {Richard J.W.} and Maszara, {Witek P.} and Kirsch, {Paul D.} and Kim, {Dae Hyun}",

year = "2014",

month = jul,

doi = "10.7567/APEX.7.074201",

language = "English",

volume = "7",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "7",

}

TY - JOUR

T1 - In0.7Ga0.3As quantum well MOSFETs with Al 2O3/HfO2 toward subthreshold swing of ∼60mV/dec

AU - Kim, Tae Woo

AU - Koh, Donghyi

AU - Kwon, Hyukmin

AU - Shin, Chan Soo

AU - Park, Won Kyu

AU - Shin, Seung Heon

AU - Cho, Youngdae

AU - Ko, Dae Hong

AU - Hill, Richard J.W.

AU - Maszara, Witek P.

AU - Kirsch, Paul D.

AU - Kim, Dae Hyun

PY - 2014/7

Y1 - 2014/7

N2 - We have successfully demonstrated In0.7Ga0.3As quantum well (QW) MOSFETs with Al2O3/HfO2 toward a subthreshold swing of ∼60mV/decade. The fabricated In 0.7Ga0.3As QW MOSFET with Lg = 5 μm exhibits an excellent subthreshold swing of 69mV/dec and a drain-induced barrier lowering (DIBL) of less than 10mV/V at VDS = 0.5V with EOT ∼0.8 nm. On the basis of measured C-V and I-V data, we extracted the effective mobility (μn,eff) from our long-channel InGaAs QW MOSFET, yielding an excellent μn,eff of approximately 3,400cm2V -1 s-1 at 300 K.

AB - We have successfully demonstrated In0.7Ga0.3As quantum well (QW) MOSFETs with Al2O3/HfO2 toward a subthreshold swing of ∼60mV/decade. The fabricated In 0.7Ga0.3As QW MOSFET with Lg = 5 μm exhibits an excellent subthreshold swing of 69mV/dec and a drain-induced barrier lowering (DIBL) of less than 10mV/V at VDS = 0.5V with EOT ∼0.8 nm. On the basis of measured C-V and I-V data, we extracted the effective mobility (μn,eff) from our long-channel InGaAs QW MOSFET, yielding an excellent μn,eff of approximately 3,400cm2V -1 s-1 at 300 K.

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U2 - 10.7567/APEX.7.074201

DO - 10.7567/APEX.7.074201

M3 - Article

AN - SCOPUS:84904675903

SN - 1882-0778

VL - 7

JO - Applied Physics Express

JF - Applied Physics Express

IS - 7

M1 - 074201

ER -

In_0.7Ga_0.3As quantum well MOSFETs with Al ₂O₃/HfO₂ toward subthreshold swing of ∼60mV/dec

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