In situ solid phase epitaxial growth of C49-TiSi2 on Si (111)-7×7 substrate

Chi Kyu Choi; Soo Jeong Yang; Jai Yon Ryu; Jeong Yong Lee; Hyung Ho Park; Oh Joon Kwon; Yong Pak Lee; Kun Ho Kim

doi:10.1063/1.110007

In situ solid phase epitaxial growth of C49-TiSi₂ on Si (111)-7×7 substrate

Chi Kyu Choi, Soo Jeong Yang, Jai Yon Ryu, Jeong Yong Lee, Hyung Ho Park, Oh Joon Kwon, Yong Pak Lee, Kun Ho Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

C49-TiSi₂ film was grown epitaxially on Si(111) substrate by depositing Ti film on Si(111)- 7×7 surface followed by in situ annealing in ultrahigh vacuum. The deposition was monitored by means of reflection high energy electron diffraction as a function of the thickness of Ti film. The best result for the growth of epitaxial C49-TiSi₂ was obtained from the Ti(30 ML)/Si(111)-7×7 sample which was annealed at 650°C for 20 min. Images of cross-sectional high resolution transmission electron microscopy shows that the silicide/silicon interface is shown to be clear and flat. The orientation relationships are TiSi₂[2̄11]∥Si[011̄], TiSi₂ (120)∥Si(111) without misorientation angle. Almost the whole area of the TiSi₂ layer is revealed as an epitaxial C49 structure.

Original language	English
Pages (from-to)	485-487
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	4
DOIs	https://doi.org/10.1063/1.110007
Publication status	Published - 1993

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.110007

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@article{88443ed536294561a4d0cd74920be2c5,

title = "In situ solid phase epitaxial growth of C49-TiSi2 on Si (111)-7×7 substrate",

abstract = "C49-TiSi2 film was grown epitaxially on Si(111) substrate by depositing Ti film on Si(111)- 7×7 surface followed by in situ annealing in ultrahigh vacuum. The deposition was monitored by means of reflection high energy electron diffraction as a function of the thickness of Ti film. The best result for the growth of epitaxial C49-TiSi2 was obtained from the Ti(30 ML)/Si(111)-7×7 sample which was annealed at 650°C for 20 min. Images of cross-sectional high resolution transmission electron microscopy shows that the silicide/silicon interface is shown to be clear and flat. The orientation relationships are TiSi2[{\=2}11]∥Si[01{\=1}], TiSi2 (120)∥Si(111) without misorientation angle. Almost the whole area of the TiSi2 layer is revealed as an epitaxial C49 structure.",

author = "Choi, {Chi Kyu} and Yang, {Soo Jeong} and Ryu, {Jai Yon} and Lee, {Jeong Yong} and Park, {Hyung Ho} and Kwon, {Oh Joon} and Lee, {Yong Pak} and Kim, {Kun Ho}",

year = "1993",

doi = "10.1063/1.110007",

language = "English",

volume = "63",

pages = "485--487",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "4",

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TY - JOUR

T1 - In situ solid phase epitaxial growth of C49-TiSi2 on Si (111)-7×7 substrate

AU - Choi, Chi Kyu

AU - Yang, Soo Jeong

AU - Ryu, Jai Yon

AU - Lee, Jeong Yong

AU - Park, Hyung Ho

AU - Kwon, Oh Joon

AU - Lee, Yong Pak

AU - Kim, Kun Ho

PY - 1993

Y1 - 1993

N2 - C49-TiSi2 film was grown epitaxially on Si(111) substrate by depositing Ti film on Si(111)- 7×7 surface followed by in situ annealing in ultrahigh vacuum. The deposition was monitored by means of reflection high energy electron diffraction as a function of the thickness of Ti film. The best result for the growth of epitaxial C49-TiSi2 was obtained from the Ti(30 ML)/Si(111)-7×7 sample which was annealed at 650°C for 20 min. Images of cross-sectional high resolution transmission electron microscopy shows that the silicide/silicon interface is shown to be clear and flat. The orientation relationships are TiSi2[2̄11]∥Si[011̄], TiSi2 (120)∥Si(111) without misorientation angle. Almost the whole area of the TiSi2 layer is revealed as an epitaxial C49 structure.

AB - C49-TiSi2 film was grown epitaxially on Si(111) substrate by depositing Ti film on Si(111)- 7×7 surface followed by in situ annealing in ultrahigh vacuum. The deposition was monitored by means of reflection high energy electron diffraction as a function of the thickness of Ti film. The best result for the growth of epitaxial C49-TiSi2 was obtained from the Ti(30 ML)/Si(111)-7×7 sample which was annealed at 650°C for 20 min. Images of cross-sectional high resolution transmission electron microscopy shows that the silicide/silicon interface is shown to be clear and flat. The orientation relationships are TiSi2[2̄11]∥Si[011̄], TiSi2 (120)∥Si(111) without misorientation angle. Almost the whole area of the TiSi2 layer is revealed as an epitaxial C49 structure.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

In situ solid phase epitaxial growth of C49-TiSi₂ on Si (111)-7×7 substrate

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