In situ removal of native oxides from silicon surfaces using anhydrous hydrogen fluoride gas

Heungsoo Park; Daehong Ko; Pushika Apte; C. R. Helms; K. C. Saraswat

doi:10.1149/1.1390642

In situ removal of native oxides from silicon surfaces using anhydrous hydrogen fluoride gas

Heungsoo Park, Daehong Ko, Pushika Apte, C. R. Helms, K. C. Saraswat

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

An in situ, anhydrous hydrogen fluoride (AHF)-based native oxide removal technique is developed, in which the wafer is subjected to AHF at low temperatures for a few minutes and/or followed by a hydrogen spike at high temperature immediately prior to polysilicon deposition. Auger electron spectroscopy analysis shows that this process sequence is able to remove native oxides grown by standard wet cleans such as hydrochloric acid/hydrogen peroxide solution and hydrofluoric acid solution. No moisture is used in this study.

Original language	English
Pages (from-to)	77-79
Number of pages	3
Journal	Electrochemical and Solid-State Letters
Volume	1
Issue number	2
DOIs	https://doi.org/10.1149/1.1390642
Publication status	Published - 1998 Aug

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.1390642

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AU - Ko, Daehong

AU - Apte, Pushika

AU - Helms, C. R.

AU - Saraswat, K. C.

PY - 1998/8

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AB - An in situ, anhydrous hydrogen fluoride (AHF)-based native oxide removal technique is developed, in which the wafer is subjected to AHF at low temperatures for a few minutes and/or followed by a hydrogen spike at high temperature immediately prior to polysilicon deposition. Auger electron spectroscopy analysis shows that this process sequence is able to remove native oxides grown by standard wet cleans such as hydrochloric acid/hydrogen peroxide solution and hydrofluoric acid solution. No moisture is used in this study.

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In situ removal of native oxides from silicon surfaces using anhydrous hydrogen fluoride gas

Abstract

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