During the Joule-heating induced crystallization (JIC) process of amorphous silicon for display applications, its phase transformation from amorphous to polycrystalline phases occurs through two different kinetic paths of either solid-to-solid or solid-to-liquid-to-solid phases. Depending on input conditions such as power density and pulsing time, each path results in nano-crystalline silicon phases or large grain structures produced by lateral growth, respectively. In this study, the phase-transformation phenomena during the JIC process were detected electrically and optically by the in-situ measurements of input voltage/current and normal reflectance at wavelength of 532 nm. The temperature field estimated from a simple conduction model confirms the phase-transformation behavior observed experimentally. In addition we could obtain the poly-Si structure produced by solid phase crystallization having the process time of 250 μs and reaching the highest temperature around 1350 K.
|Number of pages||7|
|Journal||Thin Solid Films|
|Publication status||Published - 2011 Jun 1|
Bibliographical noteFunding Information:
This work was supported by the Korea Science and Engineering Foundation grant fund (no. R01-2008-000-10897-0 ) and by the National Research Foundation grant fund (no. 2009-0083510 ) through Multi-phenomena CFD Engineering Research Center.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry