In-situ growth of oriented PbTiO3 thin films by low temperature metalorganic chemical vapor deposition

Chae Hyun Wang, Dong Jin Won, Doo Jin Choi

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4 Citations (Scopus)


Oriented PbTiO3 thin films were successfully grown on (200)-oriented Pt/SiO2/Si by metalorganic chemical vapor deposition at low temperature range from 350 °C to 400 °C, using β-diketonate complex of Pb(tmhd)2 and titanium isopropoxide as source precursors. Dependences of orientation and formation of crystalline PbTiO3 phase on Pb/Ti ratio and substrate temperature was investigated. Crystalline phases and preferred orientations were determined by X-ray diffraction technique, and surface morphology was identified with scanning electron microscopy. As the deposition temperature was raised from 350 °C to 400 °C at two fixed Pb/Ti ratios of 3.3 and 5.0, structures of PbTiO3 films transformed from amorphous to polycrystalline and preferred orientation changed from random to [100] parallel to the surface. Similar results were also observed in the films deposited at 400 °C with the increase of Pb/Ti ratio from 1.1 to 5.0. As the Pb/Ti ratio increased, the dielectric constant and current density increased due to crystallization of the PbTiO3 films. It is found that the control of excess Pb precursor amount through Pb/Ti ratio change is the key process parameter for the formation of crystalline PbTiO3 phase in the low temperature MOCVD process.

Original languageEnglish
Pages (from-to)815-820
Number of pages6
JournalJournal of Materials Science
Issue number4
Publication statusPublished - 2001

Bibliographical note

Funding Information:
This work was supported by Yonsei University Research Fund of 1999.

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering


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