Improving the performances of oxide phototransistors using a mechanochemically treated porous visible-light absorption layer

I. Sak Lee, Dongwoo Kim, Su Jin Jung, Byung Ha Kang, Hyun Jae Kim

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

In this research, the use of indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) with a porous oxide layer (POL) resulting from the mechanochemical treatment of spin-coated oxide films is suggested for the detection of visible light. Mechanochemical treatment is a new technique that uses cellophane tape to induce the selective formation of hydrophobic dots on the surface of the a-IGZO. These dots interfere with the deposition of the film during spin coating, resulting in pore formation. The IGZO TFT with a POL exhibits 341.32 A/W photoresponsivity, 1.10 × 106 photosensitivity, and 4.54 × 1010 Jones detectivity under 532 nm light illumination.

Original languageEnglish
Pages (from-to)217-222
Number of pages6
JournalJournal of Information Display
Volume21
Issue number4
DOIs
Publication statusPublished - 2020 Dec

Bibliographical note

Publisher Copyright:
© 2019 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group on behalf of the Korean Information Display Society.

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Improving the performances of oxide phototransistors using a mechanochemically treated porous visible-light absorption layer'. Together they form a unique fingerprint.

Cite this