Abstract
Due to the emergence of extremely high density memory and growing number of embedded memories, the memory yield became an important issue. In this paper, we proposed methods to exploit replaced defective columns to improve memory ECC. To utilize replaced defective columns, the defect information needs to be stored. In order to store defect information, the proposed method requires a spare column. Experimental results show that the proposed method can significantly improve the memory ECC.
Original language | English |
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Title of host publication | ISOCC 2015 - International SoC Design Conference |
Subtitle of host publication | SoC for Internet of Everything (IoE) |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 63-64 |
Number of pages | 2 |
ISBN (Electronic) | 9781467393089 |
DOIs | |
Publication status | Published - 2016 Feb 8 |
Event | 12th International SoC Design Conference, ISOCC 2015 - Gyeongju, Korea, Republic of Duration: 2015 Nov 2 → 2015 Nov 5 |
Publication series
Name | ISOCC 2015 - International SoC Design Conference: SoC for Internet of Everything (IoE) |
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Other
Other | 12th International SoC Design Conference, ISOCC 2015 |
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Country/Territory | Korea, Republic of |
City | Gyeongju |
Period | 15/11/2 → 15/11/5 |
Bibliographical note
Publisher Copyright:© 2015 IEEE.
All Science Journal Classification (ASJC) codes
- Hardware and Architecture
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials