TY - JOUR
T1 - Improvement of thermal stability of Ni-Germanide with Ni/Co/Ni/TiN structure for high performance ge metal-oxide-semiconductor field effect transistors
AU - Shin, Hong Sik
AU - Oh, Se Kyung
AU - Kang, Min Ho
AU - Kwon, Hyuk Min
AU - Oh, Jungwoo
AU - Majhi, Prashant
AU - Jammy, Raj
AU - Lee, Ga Won
AU - Lee, Hi Deok
PY - 2012/2
Y1 - 2012/2
N2 - In this paper, the thermal stability of Ni-germanide is improved by utilizing Ni/Co/Ni/TiN structure for Ge metal-oxide-semiconductor field effect transistors (MOSFETs) technology. It was shown that the Ni/Co/Ni/TiN structure improved the thermal stability of Ni-germanide mainly due to the suppression of Ni diffusion, and/or the retardation of agglomeration. The incorporated Co atoms distributed, mainly in the top region of the Nigermanide and it is believed that this Co-rich Ni-germanide layer in the upper region of Ni-germanide enhanced the thermal stability. Therefore, the proposed Ni/Co/Ni/TiN structure is promising for the formation of a highly thermally immune Ni-germanide for nanoscale Ge MOSFETs technology.
AB - In this paper, the thermal stability of Ni-germanide is improved by utilizing Ni/Co/Ni/TiN structure for Ge metal-oxide-semiconductor field effect transistors (MOSFETs) technology. It was shown that the Ni/Co/Ni/TiN structure improved the thermal stability of Ni-germanide mainly due to the suppression of Ni diffusion, and/or the retardation of agglomeration. The incorporated Co atoms distributed, mainly in the top region of the Nigermanide and it is believed that this Co-rich Ni-germanide layer in the upper region of Ni-germanide enhanced the thermal stability. Therefore, the proposed Ni/Co/Ni/TiN structure is promising for the formation of a highly thermally immune Ni-germanide for nanoscale Ge MOSFETs technology.
UR - http://www.scopus.com/inward/record.url?scp=84863122980&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84863122980&partnerID=8YFLogxK
U2 - 10.1143/JJAP.51.02BA02
DO - 10.1143/JJAP.51.02BA02
M3 - Article
AN - SCOPUS:84863122980
SN - 0021-4922
VL - 51
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 2 PART 2
M1 - 02BA02
ER -