TY - GEN
T1 - Improvement of the structural quality of GaAs layers grown on Si with LT-GaAs intermediate layer
AU - Weber, Zuzanna Liliental
AU - Fujioka, H.
AU - Sohn, H.
AU - Weber, E. R.
PY - 1994
Y1 - 1994
N2 - Superior electrical and optical quality of GaAs grown on Si with an inserted low-temperature (LT)-GaAs buffer-layer was demonstrated. Photoluminescence intensity was increasing and leakage current of Schottky diodes build on such a structure was decreasing by few orders of magnitude. These observations were correlated with structural studies employing classical and high-resolution transmission electron microscopy (TEM). Bending of the threading dislocations and their interaction was observed at the interface between a cap GaAs layer and the LT-GaAs layer. This dislocation interaction results in the reduction of dislocation density by at least one order of magnitude or more compared for the GaAs layers with the same thickness grown on Si. The surface morphology of the cap GaAs layer is improving as well.
AB - Superior electrical and optical quality of GaAs grown on Si with an inserted low-temperature (LT)-GaAs buffer-layer was demonstrated. Photoluminescence intensity was increasing and leakage current of Schottky diodes build on such a structure was decreasing by few orders of magnitude. These observations were correlated with structural studies employing classical and high-resolution transmission electron microscopy (TEM). Bending of the threading dislocations and their interaction was observed at the interface between a cap GaAs layer and the LT-GaAs layer. This dislocation interaction results in the reduction of dislocation density by at least one order of magnitude or more compared for the GaAs layers with the same thickness grown on Si. The surface morphology of the cap GaAs layer is improving as well.
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M3 - Conference contribution
AN - SCOPUS:0028292889
SN - 1558992243
T3 - Materials Research Society Symposium Proceedings
SP - 377
EP - 382
BT - Materials Research Society Symposium Proceedings
PB - Publ by Materials Research Society
T2 - Proceedings of the Symposium on Defects in Advanced Semiconductors: Physics and Applications
Y2 - 29 November 1993 through 1 December 1993
ER -