Improvement of the stability under high voltage and high temperature stress by using nitrogen doped IGZO TFTs

In Tak Cho; Jiyong Noh; Pilsang Yun; Jaeman Jang; Dohyung Lee; Ju Heyuck Baeck; Seok Woo Lee; Kwon Shik Park; Sooyoung Yoon; Jang Yeon Kwon; Inbyeong Kang

Improvement of the stability under high voltage and high temperature stress by using nitrogen doped IGZO TFTs

In Tak Cho, Jiyong Noh, Pilsang Yun, Jaeman Jang, Dohyung Lee, Ju Heyuck Baeck, Seok Woo Lee, Kwon Shik Park, Sooyoung Yoon, Jang Yeon Kwon, Inbyeong Kang

School of Integrated Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The stability under high gate/drain voltage and high temperature stress is the most important property for the commercial display and automobile display. In this paper, we report the improvement results about the abnormal behavior of V_th(-) shift under high temperature PBTS and hump degradation of subthreshold slope under high bias stress by using nitrogen doped IGZO TFTs.

Original language	English
Title of host publication	25th International Display Workshops, IDW 2018
Publisher	International Display Workshops
Pages	302-304
Number of pages	3
ISBN (Electronic)	9781510883918
Publication status	Published - 2018
Event	25th International Display Workshops, IDW 2018 - Nagoya, Japan Duration: 2018 Dec 12 → 2018 Dec 14

Publication series

Name	Proceedings of the International Display Workshops
Volume	1
ISSN (Print)	1883-2490

Conference

Conference	25th International Display Workshops, IDW 2018
Country/Territory	Japan
City	Nagoya
Period	18/12/12 → 18/12/14

Bibliographical note

Publisher Copyright:
© 2018 International Display Workshops. All rights reserved.

All Science Journal Classification (ASJC) codes

Computer Vision and Pattern Recognition
Human-Computer Interaction
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Radiology Nuclear Medicine and imaging

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

Cho, I. T., Noh, J., Yun, P., Jang, J., Lee, D., Baeck, J. H., Lee, S. W., Park, K. S., Yoon, S., Kwon, J. Y., & Kang, I. (2018). Improvement of the stability under high voltage and high temperature stress by using nitrogen doped IGZO TFTs. In 25th International Display Workshops, IDW 2018 (pp. 302-304). (Proceedings of the International Display Workshops; Vol. 1). International Display Workshops.

@inproceedings{252c4596bba149d783543dbfc83a7896,

title = "Improvement of the stability under high voltage and high temperature stress by using nitrogen doped IGZO TFTs",

abstract = "The stability under high gate/drain voltage and high temperature stress is the most important property for the commercial display and automobile display. In this paper, we report the improvement results about the abnormal behavior of Vth(-) shift under high temperature PBTS and hump degradation of subthreshold slope under high bias stress by using nitrogen doped IGZO TFTs.",

author = "Cho, {In Tak} and Jiyong Noh and Pilsang Yun and Jaeman Jang and Dohyung Lee and Baeck, {Ju Heyuck} and Lee, {Seok Woo} and Park, {Kwon Shik} and Sooyoung Yoon and Kwon, {Jang Yeon} and Inbyeong Kang",

note = "Publisher Copyright: {\textcopyright} 2018 International Display Workshops. All rights reserved.; 25th International Display Workshops, IDW 2018 ; Conference date: 12-12-2018 Through 14-12-2018",

year = "2018",

language = "English",

series = "Proceedings of the International Display Workshops",

publisher = "International Display Workshops",

pages = "302--304",

booktitle = "25th International Display Workshops, IDW 2018",

}

Cho, IT, Noh, J, Yun, P, Jang, J, Lee, D, Baeck, JH, Lee, SW, Park, KS, Yoon, S, Kwon, JY & Kang, I 2018, Improvement of the stability under high voltage and high temperature stress by using nitrogen doped IGZO TFTs. in 25th International Display Workshops, IDW 2018. Proceedings of the International Display Workshops, vol. 1, International Display Workshops, pp. 302-304, 25th International Display Workshops, IDW 2018, Nagoya, Japan, 18/12/12.

Improvement of the stability under high voltage and high temperature stress by using nitrogen doped IGZO TFTs. / Cho, In Tak; Noh, Jiyong; Yun, Pilsang et al.
25th International Display Workshops, IDW 2018. International Display Workshops, 2018. p. 302-304 (Proceedings of the International Display Workshops; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Improvement of the stability under high voltage and high temperature stress by using nitrogen doped IGZO TFTs

AU - Cho, In Tak

AU - Noh, Jiyong

AU - Yun, Pilsang

AU - Jang, Jaeman

AU - Lee, Dohyung

AU - Baeck, Ju Heyuck

AU - Lee, Seok Woo

AU - Park, Kwon Shik

AU - Yoon, Sooyoung

AU - Kwon, Jang Yeon

AU - Kang, Inbyeong

PY - 2018

Y1 - 2018

N2 - The stability under high gate/drain voltage and high temperature stress is the most important property for the commercial display and automobile display. In this paper, we report the improvement results about the abnormal behavior of Vth(-) shift under high temperature PBTS and hump degradation of subthreshold slope under high bias stress by using nitrogen doped IGZO TFTs.

AB - The stability under high gate/drain voltage and high temperature stress is the most important property for the commercial display and automobile display. In this paper, we report the improvement results about the abnormal behavior of Vth(-) shift under high temperature PBTS and hump degradation of subthreshold slope under high bias stress by using nitrogen doped IGZO TFTs.

UR - http://www.scopus.com/inward/record.url?scp=85072108419&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85072108419&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:85072108419

T3 - Proceedings of the International Display Workshops

SP - 302

EP - 304

BT - 25th International Display Workshops, IDW 2018

PB - International Display Workshops

T2 - 25th International Display Workshops, IDW 2018

Y2 - 12 December 2018 through 14 December 2018

ER -

Improvement of the stability under high voltage and high temperature stress by using nitrogen doped IGZO TFTs

Abstract

Publication series

Conference

Bibliographical note

All Science Journal Classification (ASJC) codes

UN SDGs

Other files and links

Fingerprint

Cite this