Improvement of TaNx barrier effectiveness without Cu (111) texture degradation

Woo Sig Min; Sung Gyu Pyo; Heon Do Kim; Sibum Kim; Tae Kwon Lee; Sang Kyun Park; Hyun Chul Sohn

Improvement of TaN_x barrier effectiveness without Cu (111) texture degradation

Woo Sig Min, Sung Gyu Pyo, Heon Do Kim, Sibum Kim, Tae Kwon Lee, Sang Kyun Park, Hyun Chul Sohn

Department of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

The barrier effectiveness of the thin ionized PVD TaN_x film was improved by exposing in oxygen atmosphere before copper deposition. The extremely thin ionized PVD TaN_x films (x=0.5) below 30 Å were deposited on 8 inch bare Si wafers and followed by the ionized PVD Cu (500 Å) deposition in situ. They were annealed at the range of 300°C to 450°C in vacuum for 30 minutes. XRD analysis of the Cu film with the last double layered TaN_x film showed strong Cu (111) peak.

Original language	English
Pages (from-to)	619-623
Number of pages	5
Journal	Advanced Metallization Conference (AMC)
Publication status	Published - 2001
Event	Advanced Metallization Conference 2001 (AMC 2001) - Montreal, Que., Canada Duration: 2001 Oct 8 → 2001 Oct 11

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)

Cite this

@article{cf265926069f4e85ba79b9f947dea1d7,

title = "Improvement of TaNx barrier effectiveness without Cu (111) texture degradation",

abstract = "The barrier effectiveness of the thin ionized PVD TaNx film was improved by exposing in oxygen atmosphere before copper deposition. The extremely thin ionized PVD TaNx films (x=0.5) below 30 {\AA} were deposited on 8 inch bare Si wafers and followed by the ionized PVD Cu (500 {\AA}) deposition in situ. They were annealed at the range of 300°C to 450°C in vacuum for 30 minutes. XRD analysis of the Cu film with the last double layered TaNx film showed strong Cu (111) peak.",

author = "Min, {Woo Sig} and Pyo, {Sung Gyu} and Kim, {Heon Do} and Sibum Kim and Lee, {Tae Kwon} and Park, {Sang Kyun} and Sohn, {Hyun Chul}",

year = "2001",

language = "English",

pages = "619--623",

journal = "Advanced Metallization Conference (AMC)",

issn = "1540-1766",

note = "Advanced Metallization Conference 2001 (AMC 2001) ; Conference date: 08-10-2001 Through 11-10-2001",

}

TY - JOUR

T1 - Improvement of TaNx barrier effectiveness without Cu (111) texture degradation

AU - Min, Woo Sig

AU - Pyo, Sung Gyu

AU - Kim, Heon Do

AU - Kim, Sibum

AU - Lee, Tae Kwon

AU - Park, Sang Kyun

AU - Sohn, Hyun Chul

PY - 2001

Y1 - 2001

N2 - The barrier effectiveness of the thin ionized PVD TaNx film was improved by exposing in oxygen atmosphere before copper deposition. The extremely thin ionized PVD TaNx films (x=0.5) below 30 Å were deposited on 8 inch bare Si wafers and followed by the ionized PVD Cu (500 Å) deposition in situ. They were annealed at the range of 300°C to 450°C in vacuum for 30 minutes. XRD analysis of the Cu film with the last double layered TaNx film showed strong Cu (111) peak.

AB - The barrier effectiveness of the thin ionized PVD TaNx film was improved by exposing in oxygen atmosphere before copper deposition. The extremely thin ionized PVD TaNx films (x=0.5) below 30 Å were deposited on 8 inch bare Si wafers and followed by the ionized PVD Cu (500 Å) deposition in situ. They were annealed at the range of 300°C to 450°C in vacuum for 30 minutes. XRD analysis of the Cu film with the last double layered TaNx film showed strong Cu (111) peak.

UR - http://www.scopus.com/inward/record.url?scp=0035555102&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035555102&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0035555102

SN - 1540-1766

SP - 619

EP - 623

JO - Advanced Metallization Conference (AMC)

JF - Advanced Metallization Conference (AMC)

T2 - Advanced Metallization Conference 2001 (AMC 2001)

Y2 - 8 October 2001 through 11 October 2001

ER -

Improvement of TaN_x barrier effectiveness without Cu (111) texture degradation

Abstract

All Science Journal Classification (ASJC) codes

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