Improvement of TaNx barrier effectiveness without Cu (111) texture degradation

Woo Sig Min, Sung Gyu Pyo, Heon Do Kim, Sibum Kim, Tae Kwon Lee, Sang Kyun Park, Hyun Chul Sohn

Research output: Contribution to journalConference articlepeer-review


The barrier effectiveness of the thin ionized PVD TaNx film was improved by exposing in oxygen atmosphere before copper deposition. The extremely thin ionized PVD TaNx films (x=0.5) below 30 Å were deposited on 8 inch bare Si wafers and followed by the ionized PVD Cu (500 Å) deposition in situ. They were annealed at the range of 300°C to 450°C in vacuum for 30 minutes. XRD analysis of the Cu film with the last double layered TaNx film showed strong Cu (111) peak.

Original languageEnglish
Pages (from-to)619-623
Number of pages5
JournalAdvanced Metallization Conference (AMC)
Publication statusPublished - 2001
EventAdvanced Metallization Conference 2001 (AMC 2001) - Montreal, Que., Canada
Duration: 2001 Oct 82001 Oct 11

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)


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