The barrier effectiveness of the thin ionized PVD TaNx film was improved by exposing in oxygen atmosphere before copper deposition. The extremely thin ionized PVD TaNx films (x=0.5) below 30 Å were deposited on 8 inch bare Si wafers and followed by the ionized PVD Cu (500 Å) deposition in situ. They were annealed at the range of 300°C to 450°C in vacuum for 30 minutes. XRD analysis of the Cu film with the last double layered TaNx film showed strong Cu (111) peak.
|Number of pages||5|
|Journal||Advanced Metallization Conference (AMC)|
|Publication status||Published - 2001|
|Event||Advanced Metallization Conference 2001 (AMC 2001) - Montreal, Que., Canada|
Duration: 2001 Oct 8 → 2001 Oct 11
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)