TY - GEN
T1 - Improvement of contact resistance in transparent thin film transistor by applying an Al/SWCNTs bilayer as electrodes
AU - Lee, Su Jeong
AU - Kim, Yun Cheol
AU - Lee, Tae Il
AU - Kim, Jung Han
AU - Kim, Chul Hong
AU - Chae, Gee Sung
AU - Myoung, Jae Min
PY - 2014
Y1 - 2014
N2 - Contact resistance has an important effect on the electrical characteristics of the thin film transistor (TFT). In the solution process, we present a study on the improvement of contact resistance between the single-walled carbon nanotubes (SWCNTs) and indium oxide (In2O 3). In order to reduce the high carrier injection barrier for SWCNTs, aluminum (Al) was deposited as a contact layer between the SWCNTs and In 2O3 films. Integrated device consisting of Al/SWCNT bilayers, In2O3 and hafnium oxide (HfO2) as source and drain electrodes, channel layers and gate insulator, respectively, were fabricated on indium tin oxide (ITO) glass, bottom gate, structure. The threshold voltage of 0.53 V, sub-threshold swing of 0.39 Vdec-1, field-effect mobility of 3.18 cm2 V-1s-1 and Ion / Ioff ratio of ∼106 were obtained. Furthermore, a transmittance of 69.82% was obtained.
AB - Contact resistance has an important effect on the electrical characteristics of the thin film transistor (TFT). In the solution process, we present a study on the improvement of contact resistance between the single-walled carbon nanotubes (SWCNTs) and indium oxide (In2O 3). In order to reduce the high carrier injection barrier for SWCNTs, aluminum (Al) was deposited as a contact layer between the SWCNTs and In 2O3 films. Integrated device consisting of Al/SWCNT bilayers, In2O3 and hafnium oxide (HfO2) as source and drain electrodes, channel layers and gate insulator, respectively, were fabricated on indium tin oxide (ITO) glass, bottom gate, structure. The threshold voltage of 0.53 V, sub-threshold swing of 0.39 Vdec-1, field-effect mobility of 3.18 cm2 V-1s-1 and Ion / Ioff ratio of ∼106 were obtained. Furthermore, a transmittance of 69.82% was obtained.
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M3 - Conference contribution
AN - SCOPUS:84907406270
SN - 9781482258264
T3 - Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014
SP - 17
EP - 20
BT - Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014
PB - Nano Science and Technology Institute
T2 - Nanotechnology 2014: Graphene, CNTs, Particles, Films and Composites - 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014
Y2 - 15 June 2014 through 18 June 2014
ER -