Improvement of breakdown characteristics of a GaAs power field-effect transistor using (NH4)2Sx treatment

Jong Lam Lee; Dojin Kim; Sung Jae Maeng; Hyung Ho Park; Jin Young Kang; Yong Tak Lee

doi:10.1063/1.352931

Improvement of breakdown characteristics of a GaAs power field-effect transistor using (NH₄)₂S_x treatment

Jong Lam Lee, Dojin Kim, Sung Jae Maeng, Hyung Ho Park, Jin Young Kang, Yong Tak Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

A (NH₄)₂S_x solution treatment technique was applied to a GaAs metal-semiconductor field-effect transistor (MESFET) to improve the electrical properties of the transistor. The gate leakage current of the MESFET remarkably decreased while the drain breakdown voltage doubled to 30 V with the (NH₄)₂S_x treatment. The (NH ₄)₂S_x treatment was found to effectively suppress the formation of donor-type defects at the GaAs surface and to increase the Schottky barrier height.

Original language	English
Pages (from-to)	3539-3542
Number of pages	4
Journal	Journal of Applied Physics
Volume	73
Issue number	7
DOIs	https://doi.org/10.1063/1.352931
Publication status	Published - 1993

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Access to Document

10.1063/1.352931

Cite this

@article{6d202bb853b845b787531e0a79a72ccd,

title = "Improvement of breakdown characteristics of a GaAs power field-effect transistor using (NH4)2Sx treatment",

abstract = "A (NH4)2Sx solution treatment technique was applied to a GaAs metal-semiconductor field-effect transistor (MESFET) to improve the electrical properties of the transistor. The gate leakage current of the MESFET remarkably decreased while the drain breakdown voltage doubled to 30 V with the (NH4)2Sx treatment. The (NH 4)2Sx treatment was found to effectively suppress the formation of donor-type defects at the GaAs surface and to increase the Schottky barrier height.",

author = "Lee, {Jong Lam} and Dojin Kim and Maeng, {Sung Jae} and Park, {Hyung Ho} and Kang, {Jin Young} and Lee, {Yong Tak}",

year = "1993",

doi = "10.1063/1.352931",

language = "English",

volume = "73",

pages = "3539--3542",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "7",

}

TY - JOUR

T1 - Improvement of breakdown characteristics of a GaAs power field-effect transistor using (NH4)2Sx treatment

AU - Lee, Jong Lam

AU - Kim, Dojin

AU - Maeng, Sung Jae

AU - Park, Hyung Ho

AU - Kang, Jin Young

AU - Lee, Yong Tak

PY - 1993

Y1 - 1993

N2 - A (NH4)2Sx solution treatment technique was applied to a GaAs metal-semiconductor field-effect transistor (MESFET) to improve the electrical properties of the transistor. The gate leakage current of the MESFET remarkably decreased while the drain breakdown voltage doubled to 30 V with the (NH4)2Sx treatment. The (NH 4)2Sx treatment was found to effectively suppress the formation of donor-type defects at the GaAs surface and to increase the Schottky barrier height.

AB - A (NH4)2Sx solution treatment technique was applied to a GaAs metal-semiconductor field-effect transistor (MESFET) to improve the electrical properties of the transistor. The gate leakage current of the MESFET remarkably decreased while the drain breakdown voltage doubled to 30 V with the (NH4)2Sx treatment. The (NH 4)2Sx treatment was found to effectively suppress the formation of donor-type defects at the GaAs surface and to increase the Schottky barrier height.

UR - http://www.scopus.com/inward/record.url?scp=36449008809&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36449008809&partnerID=8YFLogxK

U2 - 10.1063/1.352931

DO - 10.1063/1.352931

M3 - Article

AN - SCOPUS:36449008809

SN - 0021-8979

VL - 73

SP - 3539

EP - 3542

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

ER -

Improvement of breakdown characteristics of a GaAs power field-effect transistor using (NH₄)₂S_x treatment

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this