Improvement in the optical absorption of PECVD microcrystalline Si thin film through modification of the crystalline fraction through an annealing process

Mihyun Yoon; Kyungtaek Im; Jahyun Yang; Sangwoo Lim

doi:10.1016/j.physb.2009.12.034

Improvement in the optical absorption of PECVD microcrystalline Si thin film through modification of the crystalline fraction through an annealing process

Mihyun Yoon, Kyungtaek Im, Jahyun Yang, Sangwoo Lim

Department of Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Intrinsic microcrystalline silicon (μc-Si) thin films with varying crystalline fractions (X_C) were deposited using plasma-enhanced chemical vapor deposition. Effort was made to modify the X_C and optical properties by annealing at different temperatures, pressures, and ambient gases. After annealing, the amount of Si-H in the μc-Si thin film was decreased for an initial X_C of 7%, while that of Si-H₂ mainly decreased to an initial X_C of 60-70%. The X_C of μc-Si with an initial X_C of 7% increased by annealing. However, initial X_C of 60% and 70% resulted in a decrease of X_C upon annealing. It is suggested that an increase in crystal size of μc-Si films by annealing decreases X_C, while a decrease in crystal size increases X_C. Depending on the annealing conditions, the optical absorption property of the μc-Si thin film changed. When the initial X_C was 7%, the absorption coefficient increased as X_C increased to 16%, but slightly decreased with X_C values from 51% to 70%. Therefore, we suggest that there is an optimum X_C that exhibits the highest optical absorption.

Original language	English
Pages (from-to)	1526-1531
Number of pages	6
Journal	Physica B: Condensed Matter
Volume	405
Issue number	6
DOIs	https://doi.org/10.1016/j.physb.2009.12.034
Publication status	Published - 2010 Mar 15

Bibliographical note

Funding Information:
This work is outcome of a Manpower Development project of the Specialized Graduate School of Hydrogen & Fuel Cell supported financially by the Ministry of Commerce, Industry and Energy (MOCIE).

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/j.physb.2009.12.034

Cite this

@article{5acc9840b4cd448ab9ac4ef2ff4d9adb,

title = "Improvement in the optical absorption of PECVD microcrystalline Si thin film through modification of the crystalline fraction through an annealing process",

abstract = "Intrinsic microcrystalline silicon (μc-Si) thin films with varying crystalline fractions (XC) were deposited using plasma-enhanced chemical vapor deposition. Effort was made to modify the XC and optical properties by annealing at different temperatures, pressures, and ambient gases. After annealing, the amount of Si-H in the μc-Si thin film was decreased for an initial XC of 7%, while that of Si-H2 mainly decreased to an initial XC of 60-70%. The XC of μc-Si with an initial XC of 7% increased by annealing. However, initial XC of 60% and 70% resulted in a decrease of XC upon annealing. It is suggested that an increase in crystal size of μc-Si films by annealing decreases XC, while a decrease in crystal size increases XC. Depending on the annealing conditions, the optical absorption property of the μc-Si thin film changed. When the initial XC was 7%, the absorption coefficient increased as XC increased to 16%, but slightly decreased with XC values from 51% to 70%. Therefore, we suggest that there is an optimum XC that exhibits the highest optical absorption.",

author = "Mihyun Yoon and Kyungtaek Im and Jahyun Yang and Sangwoo Lim",

note = "Funding Information: This work is outcome of a Manpower Development project of the Specialized Graduate School of Hydrogen & Fuel Cell supported financially by the Ministry of Commerce, Industry and Energy (MOCIE). ",

year = "2010",

month = mar,

day = "15",

doi = "10.1016/j.physb.2009.12.034",

language = "English",

volume = "405",

pages = "1526--1531",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

number = "6",

}

TY - JOUR

T1 - Improvement in the optical absorption of PECVD microcrystalline Si thin film through modification of the crystalline fraction through an annealing process

AU - Yoon, Mihyun

AU - Im, Kyungtaek

AU - Yang, Jahyun

AU - Lim, Sangwoo

N1 - Funding Information: This work is outcome of a Manpower Development project of the Specialized Graduate School of Hydrogen & Fuel Cell supported financially by the Ministry of Commerce, Industry and Energy (MOCIE).

PY - 2010/3/15

Y1 - 2010/3/15

N2 - Intrinsic microcrystalline silicon (μc-Si) thin films with varying crystalline fractions (XC) were deposited using plasma-enhanced chemical vapor deposition. Effort was made to modify the XC and optical properties by annealing at different temperatures, pressures, and ambient gases. After annealing, the amount of Si-H in the μc-Si thin film was decreased for an initial XC of 7%, while that of Si-H2 mainly decreased to an initial XC of 60-70%. The XC of μc-Si with an initial XC of 7% increased by annealing. However, initial XC of 60% and 70% resulted in a decrease of XC upon annealing. It is suggested that an increase in crystal size of μc-Si films by annealing decreases XC, while a decrease in crystal size increases XC. Depending on the annealing conditions, the optical absorption property of the μc-Si thin film changed. When the initial XC was 7%, the absorption coefficient increased as XC increased to 16%, but slightly decreased with XC values from 51% to 70%. Therefore, we suggest that there is an optimum XC that exhibits the highest optical absorption.

AB - Intrinsic microcrystalline silicon (μc-Si) thin films with varying crystalline fractions (XC) were deposited using plasma-enhanced chemical vapor deposition. Effort was made to modify the XC and optical properties by annealing at different temperatures, pressures, and ambient gases. After annealing, the amount of Si-H in the μc-Si thin film was decreased for an initial XC of 7%, while that of Si-H2 mainly decreased to an initial XC of 60-70%. The XC of μc-Si with an initial XC of 7% increased by annealing. However, initial XC of 60% and 70% resulted in a decrease of XC upon annealing. It is suggested that an increase in crystal size of μc-Si films by annealing decreases XC, while a decrease in crystal size increases XC. Depending on the annealing conditions, the optical absorption property of the μc-Si thin film changed. When the initial XC was 7%, the absorption coefficient increased as XC increased to 16%, but slightly decreased with XC values from 51% to 70%. Therefore, we suggest that there is an optimum XC that exhibits the highest optical absorption.

UR - http://www.scopus.com/inward/record.url?scp=76349123149&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=76349123149&partnerID=8YFLogxK

U2 - 10.1016/j.physb.2009.12.034

DO - 10.1016/j.physb.2009.12.034

M3 - Article

AN - SCOPUS:76349123149

SN - 0921-4526

VL - 405

SP - 1526

EP - 1531

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 6

ER -

Improvement in the optical absorption of PECVD microcrystalline Si thin film through modification of the crystalline fraction through an annealing process

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this