Improved uniformity of contact resistance in GaAs MESFET using Pd/Ge/Ti/Au ohmic contacts

Joon Seop Kwak; Joog Lam Lee; Hong Koo Baik

doi:10.1109/55.735753

Improved uniformity of contact resistance in GaAs MESFET using Pd/Ge/Ti/Au ohmic contacts

Joon Seop Kwak, Joog Lam Lee, Hong Koo Baik

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Improved contact resistance uniformity, with a low resistance on high-low doped GaAs MESFET, was demonstrated using a Pd/Ge/Ti/Au ohmic contact. The lowest contact resistivity obtained was 2.8 × 10^-6 Ω-cm². The average value and standard deviation (ΔRc) of the contact resistance (Rc) were 0.73 and 0.07 Ω-mm, respectively, which were more uniform than those for AuGe/Ni contacts with an average Rc of 0.77 Ω-mm and ΔRc of 0.16 Ω-mm. The improved uniformity was attributed to the uniform penetration of the the ohmic junction into the buried high-doped channel layer by solid-state reactions, resulting in the improved uniformity of device performance.

Original language	English
Pages (from-to)	481-483
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	19
Issue number	12
DOIs	https://doi.org/10.1109/55.735753
Publication status	Published - 1998 Dec

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.735753

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title = "Improved uniformity of contact resistance in GaAs MESFET using Pd/Ge/Ti/Au ohmic contacts",

abstract = "Improved contact resistance uniformity, with a low resistance on high-low doped GaAs MESFET, was demonstrated using a Pd/Ge/Ti/Au ohmic contact. The lowest contact resistivity obtained was 2.8 × 10-6 Ω-cm2. The average value and standard deviation (ΔRc) of the contact resistance (Rc) were 0.73 and 0.07 Ω-mm, respectively, which were more uniform than those for AuGe/Ni contacts with an average Rc of 0.77 Ω-mm and ΔRc of 0.16 Ω-mm. The improved uniformity was attributed to the uniform penetration of the the ohmic junction into the buried high-doped channel layer by solid-state reactions, resulting in the improved uniformity of device performance.",

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AU - Kwak, Joon Seop

AU - Lee, Joog Lam

AU - Baik, Hong Koo

PY - 1998/12

Y1 - 1998/12

N2 - Improved contact resistance uniformity, with a low resistance on high-low doped GaAs MESFET, was demonstrated using a Pd/Ge/Ti/Au ohmic contact. The lowest contact resistivity obtained was 2.8 × 10-6 Ω-cm2. The average value and standard deviation (ΔRc) of the contact resistance (Rc) were 0.73 and 0.07 Ω-mm, respectively, which were more uniform than those for AuGe/Ni contacts with an average Rc of 0.77 Ω-mm and ΔRc of 0.16 Ω-mm. The improved uniformity was attributed to the uniform penetration of the the ohmic junction into the buried high-doped channel layer by solid-state reactions, resulting in the improved uniformity of device performance.

AB - Improved contact resistance uniformity, with a low resistance on high-low doped GaAs MESFET, was demonstrated using a Pd/Ge/Ti/Au ohmic contact. The lowest contact resistivity obtained was 2.8 × 10-6 Ω-cm2. The average value and standard deviation (ΔRc) of the contact resistance (Rc) were 0.73 and 0.07 Ω-mm, respectively, which were more uniform than those for AuGe/Ni contacts with an average Rc of 0.77 Ω-mm and ΔRc of 0.16 Ω-mm. The improved uniformity was attributed to the uniform penetration of the the ohmic junction into the buried high-doped channel layer by solid-state reactions, resulting in the improved uniformity of device performance.

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Improved uniformity of contact resistance in GaAs MESFET using Pd/Ge/Ti/Au ohmic contacts

Abstract

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