Improved thermal stability of Ni silicide on Si (100) through reactive deposition of Ni

Gi Bum Kim; Do Joon Yoo; Hong Koo Baik; Jae Min Myoung; Sung Man Lee; Sang Ho Oh; Chan Gyung Park

doi:10.1116/1.1539064

Improved thermal stability of Ni silicide on Si (100) through reactive deposition of Ni

Gi Bum Kim, Do Joon Yoo, Hong Koo Baik, Jae Min Myoung, Sung Man Lee, Sang Ho Oh, Chan Gyung Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

The thermal stability of Ni silicide was improved using the reactive deposition of Ni metal. This improvement was attributed to the formation of epitaxial NiSi₂ film and double layer structure in the as-deposited state.

Original language	English
Pages (from-to)	319-322
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	21
Issue number	1 SPEC.
DOIs	https://doi.org/10.1116/1.1539064
Publication status	Published - 2003 Jan

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1539064

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title = "Improved thermal stability of Ni silicide on Si (100) through reactive deposition of Ni",

abstract = "The thermal stability of Ni silicide was improved using the reactive deposition of Ni metal. This improvement was attributed to the formation of epitaxial NiSi2 film and double layer structure in the as-deposited state.",

author = "Kim, {Gi Bum} and Yoo, {Do Joon} and Baik, {Hong Koo} and Myoung, {Jae Min} and Lee, {Sung Man} and Oh, {Sang Ho} and Park, {Chan Gyung}",

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AU - Kim, Gi Bum

AU - Yoo, Do Joon

AU - Baik, Hong Koo

AU - Myoung, Jae Min

AU - Lee, Sung Man

AU - Oh, Sang Ho

AU - Park, Chan Gyung

PY - 2003/1

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N2 - The thermal stability of Ni silicide was improved using the reactive deposition of Ni metal. This improvement was attributed to the formation of epitaxial NiSi2 film and double layer structure in the as-deposited state.

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SN - 1071-1023

VL - 21

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EP - 322

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 1 SPEC.

ER -

Improved thermal stability of Ni silicide on Si (100) through reactive deposition of Ni

Abstract

All Science Journal Classification (ASJC) codes

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