Improved performance of GaAs MESFETs through sulfidation of Pt/GaAs interface

Jun Kyu Yang; Hyung Ho Park; Haecheon Kim; Ho Won Jang; Jong Lam Lee; Seongil Im

doi:10.1016/j.tsf.2003.09.003

Improved performance of GaAs MESFETs through sulfidation of Pt/GaAs interface

Jun Kyu Yang, Hyung Ho Park, Haecheon Kim, Ho Won Jang, Jong Lam Lee, Seongil Im

Research output: Contribution to journal › Conference article › peer-review

6 Citations (Scopus)

Abstract

Sulfidation was employed to decrease defective interfacial states of Pt/GaAs Schottky contacts. With nondestructive analysis using synchrotron radiation photoemission spectroscopy, it was found that the sulfur passivation of GaAs surface prior to Pt metallization effectively reduces interfacial elemental As and As-oxides. A reduced reverse leakage current as well as enhanced barrier height was confirmed from measurements of Schottky properties. These processes were introduced to a gate junction to improve gate leakage current characteristics and pinch-off properties of GaAs metal-semiconductor field effect transistors. The leakage current was decreased by several times and the threshold voltage was lowered by the sulfidation. The results indicate that the improved device properties after the sulfidation originate in the suppression of donor-type defect like excess As at the interface. On the basis of interfacial bonding characteristics, the electrical properties could be well understood.

Original language	English
Pages (from-to)	626-631
Number of pages	6
Journal	Thin Solid Films
Volume	447-448
DOIs	https://doi.org/10.1016/j.tsf.2003.09.003
Publication status	Published - 2004 Jan 30
Event	Proceedings of the 30th International Conference on Metallurgie - San Diego, CA, United States Duration: 2002 Apr 28 → 2002 May 2

Bibliographical note

Funding Information:
The authors wish to acknowledge the financial support of Korea Research Foundation made in the program year of 2000. The experiments at PLS were supported in part by MOST and POSTECH.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2003.09.003

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title = "Improved performance of GaAs MESFETs through sulfidation of Pt/GaAs interface",

abstract = "Sulfidation was employed to decrease defective interfacial states of Pt/GaAs Schottky contacts. With nondestructive analysis using synchrotron radiation photoemission spectroscopy, it was found that the sulfur passivation of GaAs surface prior to Pt metallization effectively reduces interfacial elemental As and As-oxides. A reduced reverse leakage current as well as enhanced barrier height was confirmed from measurements of Schottky properties. These processes were introduced to a gate junction to improve gate leakage current characteristics and pinch-off properties of GaAs metal-semiconductor field effect transistors. The leakage current was decreased by several times and the threshold voltage was lowered by the sulfidation. The results indicate that the improved device properties after the sulfidation originate in the suppression of donor-type defect like excess As at the interface. On the basis of interfacial bonding characteristics, the electrical properties could be well understood.",

author = "Yang, {Jun Kyu} and Park, {Hyung Ho} and Haecheon Kim and Jang, {Ho Won} and Lee, {Jong Lam} and Seongil Im",

note = "Funding Information: The authors wish to acknowledge the financial support of Korea Research Foundation made in the program year of 2000. The experiments at PLS were supported in part by MOST and POSTECH.; Proceedings of the 30th International Conference on Metallurgie ; Conference date: 28-04-2002 Through 02-05-2002",

year = "2004",

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doi = "10.1016/j.tsf.2003.09.003",

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TY - JOUR

T1 - Improved performance of GaAs MESFETs through sulfidation of Pt/GaAs interface

AU - Yang, Jun Kyu

AU - Park, Hyung Ho

AU - Kim, Haecheon

AU - Jang, Ho Won

AU - Lee, Jong Lam

AU - Im, Seongil

N1 - Funding Information: The authors wish to acknowledge the financial support of Korea Research Foundation made in the program year of 2000. The experiments at PLS were supported in part by MOST and POSTECH.

PY - 2004/1/30

Y1 - 2004/1/30

N2 - Sulfidation was employed to decrease defective interfacial states of Pt/GaAs Schottky contacts. With nondestructive analysis using synchrotron radiation photoemission spectroscopy, it was found that the sulfur passivation of GaAs surface prior to Pt metallization effectively reduces interfacial elemental As and As-oxides. A reduced reverse leakage current as well as enhanced barrier height was confirmed from measurements of Schottky properties. These processes were introduced to a gate junction to improve gate leakage current characteristics and pinch-off properties of GaAs metal-semiconductor field effect transistors. The leakage current was decreased by several times and the threshold voltage was lowered by the sulfidation. The results indicate that the improved device properties after the sulfidation originate in the suppression of donor-type defect like excess As at the interface. On the basis of interfacial bonding characteristics, the electrical properties could be well understood.

AB - Sulfidation was employed to decrease defective interfacial states of Pt/GaAs Schottky contacts. With nondestructive analysis using synchrotron radiation photoemission spectroscopy, it was found that the sulfur passivation of GaAs surface prior to Pt metallization effectively reduces interfacial elemental As and As-oxides. A reduced reverse leakage current as well as enhanced barrier height was confirmed from measurements of Schottky properties. These processes were introduced to a gate junction to improve gate leakage current characteristics and pinch-off properties of GaAs metal-semiconductor field effect transistors. The leakage current was decreased by several times and the threshold voltage was lowered by the sulfidation. The results indicate that the improved device properties after the sulfidation originate in the suppression of donor-type defect like excess As at the interface. On the basis of interfacial bonding characteristics, the electrical properties could be well understood.

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U2 - 10.1016/j.tsf.2003.09.003

DO - 10.1016/j.tsf.2003.09.003

M3 - Conference article

AN - SCOPUS:1342344849

SN - 0040-6090

VL - 447-448

SP - 626

EP - 631

JO - Thin Solid Films

JF - Thin Solid Films

T2 - Proceedings of the 30th International Conference on Metallurgie

Y2 - 28 April 2002 through 2 May 2002

ER -

Improved performance of GaAs MESFETs through sulfidation of Pt/GaAs interface

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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