Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition

Yoonseo Jang; Seung Min Lee; Do Hwan Jung; Jung Hwan Yum; Eric S. Larsen; Christopher W. Bielawski; Jungwoo Oh

doi:10.1016/j.sse.2019.107661

Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition

Yoonseo Jang, Seung Min Lee, Do Hwan Jung, Jung Hwan Yum, Eric S. Larsen, Christopher W. Bielawski, Jungwoo Oh

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Beryllium oxide (BeO) thin films were grown on a p-type Si substrate by plasma enhanced atomic layer deposition (PEALD) using diethylberyllium as a precursor and O₂ plasma. The PEALD BeO exhibited self-saturation and linear growth rates. The dielectric properties of PEALD were compared with those of thermal atomic layer deposition (ThALD). X-ray photoelectron spectroscopy was performed to determine the bandgap energy of PEALD BeO (8.0 eV) and ThALD BeO (7.9 eV). Capacitance–voltage curves revealed that PEALD BeO had low hysteresis and frequency dispersion compared to ThALD BeO. In addition, PEALD showed a dielectric constant of 7.15 (at 1 MHz) and low leakage current (7.25×10^-9 A/cm² at −1 MV/cm). These results indicate that the highly activated radicals from oxygen plasma prompt the chemical reaction at the substrate, thus reducing nucleation delay and interface trap density.

Original language	English
Article number	107661
Journal	Solid-State Electronics
Volume	163
DOIs	https://doi.org/10.1016/j.sse.2019.107661
Publication status	Published - 2020 Jan

Bibliographical note

Publisher Copyright:
© 2019 Elsevier Ltd

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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@article{452fd8498c8d44238be7cba36672e0ca,

title = "Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition",

abstract = "Beryllium oxide (BeO) thin films were grown on a p-type Si substrate by plasma enhanced atomic layer deposition (PEALD) using diethylberyllium as a precursor and O2 plasma. The PEALD BeO exhibited self-saturation and linear growth rates. The dielectric properties of PEALD were compared with those of thermal atomic layer deposition (ThALD). X-ray photoelectron spectroscopy was performed to determine the bandgap energy of PEALD BeO (8.0 eV) and ThALD BeO (7.9 eV). Capacitance–voltage curves revealed that PEALD BeO had low hysteresis and frequency dispersion compared to ThALD BeO. In addition, PEALD showed a dielectric constant of 7.15 (at 1 MHz) and low leakage current (7.25×10-9 A/cm2 at −1 MV/cm). These results indicate that the highly activated radicals from oxygen plasma prompt the chemical reaction at the substrate, thus reducing nucleation delay and interface trap density.",

author = "Yoonseo Jang and Lee, {Seung Min} and Jung, {Do Hwan} and Yum, {Jung Hwan} and Larsen, {Eric S.} and Bielawski, {Christopher W.} and Jungwoo Oh",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier Ltd",

year = "2020",

month = jan,

doi = "10.1016/j.sse.2019.107661",

language = "English",

volume = "163",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition

AU - Jang, Yoonseo

AU - Lee, Seung Min

AU - Jung, Do Hwan

AU - Yum, Jung Hwan

AU - Larsen, Eric S.

AU - Bielawski, Christopher W.

AU - Oh, Jungwoo

PY - 2020/1

Y1 - 2020/1

N2 - Beryllium oxide (BeO) thin films were grown on a p-type Si substrate by plasma enhanced atomic layer deposition (PEALD) using diethylberyllium as a precursor and O2 plasma. The PEALD BeO exhibited self-saturation and linear growth rates. The dielectric properties of PEALD were compared with those of thermal atomic layer deposition (ThALD). X-ray photoelectron spectroscopy was performed to determine the bandgap energy of PEALD BeO (8.0 eV) and ThALD BeO (7.9 eV). Capacitance–voltage curves revealed that PEALD BeO had low hysteresis and frequency dispersion compared to ThALD BeO. In addition, PEALD showed a dielectric constant of 7.15 (at 1 MHz) and low leakage current (7.25×10-9 A/cm2 at −1 MV/cm). These results indicate that the highly activated radicals from oxygen plasma prompt the chemical reaction at the substrate, thus reducing nucleation delay and interface trap density.

AB - Beryllium oxide (BeO) thin films were grown on a p-type Si substrate by plasma enhanced atomic layer deposition (PEALD) using diethylberyllium as a precursor and O2 plasma. The PEALD BeO exhibited self-saturation and linear growth rates. The dielectric properties of PEALD were compared with those of thermal atomic layer deposition (ThALD). X-ray photoelectron spectroscopy was performed to determine the bandgap energy of PEALD BeO (8.0 eV) and ThALD BeO (7.9 eV). Capacitance–voltage curves revealed that PEALD BeO had low hysteresis and frequency dispersion compared to ThALD BeO. In addition, PEALD showed a dielectric constant of 7.15 (at 1 MHz) and low leakage current (7.25×10-9 A/cm2 at −1 MV/cm). These results indicate that the highly activated radicals from oxygen plasma prompt the chemical reaction at the substrate, thus reducing nucleation delay and interface trap density.

UR - http://www.scopus.com/inward/record.url?scp=85072561675&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85072561675&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2019.107661

DO - 10.1016/j.sse.2019.107661

M3 - Article

AN - SCOPUS:85072561675

SN - 0038-1101

VL - 163

JO - Solid-State Electronics

JF - Solid-State Electronics

M1 - 107661

ER -

Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition

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