Improved carrier transport properties by I-doping in n-type Cu0.008Bi2Te2.7Se0.3 thermoelectric alloys

Kyu Hyoung Lee; Hyun Sik Kim; Sung sil Choo; Weon Ho Shin; Jae Hong Lim; Sung Wng Kim; Sang il Kim

doi:10.1016/j.scriptamat.2020.04.030

Improved carrier transport properties by I-doping in n-type Cu_0.008Bi₂Te_2.7Se_0.3 thermoelectric alloys

Kyu Hyoung Lee, Hyun Sik Kim, Sung sil Choo, Weon Ho Shin, Jae Hong Lim, Sung Wng Kim, Sang il Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The addition of Cu becomes essential in polycrystalline n-type Bi₂(Te,Se)₃-based alloys since it is known to enhance stability of carrier transport properties as well as thermoelectric performance. However, a way to further optimize is necessary owing to the limited controllability of transport parameters by Cu addition. Herein, we present improved carrier transport properties via I-doping in Cu_0.008Bi₂Te_2.7Se_0.3. Weighted mobility and effective mass are increased simultaneously by small amount doping of I at Te/Se-site. As a result, ~15% increased power factor and high average thermoelectric figure of merit (zT) of 0.79 were obtained in a wide temperature range.

Original language	English
Pages (from-to)	357-361
Number of pages	5
Journal	Scripta Materialia
Volume	186
DOIs	https://doi.org/10.1016/j.scriptamat.2020.04.030
Publication status	Published - 2020 Sept

Bibliographical note

Funding Information:
This work was supported by the Samsung Research Funding & Incubation Center of Samsung Electronics under Project Number SRFC-MA1701-05.

Publisher Copyright:
© 2020

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys

Access to Document

10.1016/j.scriptamat.2020.04.030

Cite this

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title = "Improved carrier transport properties by I-doping in n-type Cu0.008Bi2Te2.7Se0.3 thermoelectric alloys",

abstract = "The addition of Cu becomes essential in polycrystalline n-type Bi2(Te,Se)3-based alloys since it is known to enhance stability of carrier transport properties as well as thermoelectric performance. However, a way to further optimize is necessary owing to the limited controllability of transport parameters by Cu addition. Herein, we present improved carrier transport properties via I-doping in Cu0.008Bi2Te2.7Se0.3. Weighted mobility and effective mass are increased simultaneously by small amount doping of I at Te/Se-site. As a result, ~15% increased power factor and high average thermoelectric figure of merit (zT) of 0.79 were obtained in a wide temperature range.",

author = "Lee, {Kyu Hyoung} and Kim, {Hyun Sik} and Choo, {Sung sil} and Shin, {Weon Ho} and Lim, {Jae Hong} and Kim, {Sung Wng} and Kim, {Sang il}",

note = "Funding Information: This work was supported by the Samsung Research Funding & Incubation Center of Samsung Electronics under Project Number SRFC-MA1701-05. Publisher Copyright: {\textcopyright} 2020",

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language = "English",

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T1 - Improved carrier transport properties by I-doping in n-type Cu0.008Bi2Te2.7Se0.3 thermoelectric alloys

AU - Lee, Kyu Hyoung

AU - Kim, Hyun Sik

AU - Choo, Sung sil

AU - Shin, Weon Ho

AU - Lim, Jae Hong

AU - Kim, Sung Wng

AU - Kim, Sang il

PY - 2020/9

Y1 - 2020/9

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AB - The addition of Cu becomes essential in polycrystalline n-type Bi2(Te,Se)3-based alloys since it is known to enhance stability of carrier transport properties as well as thermoelectric performance. However, a way to further optimize is necessary owing to the limited controllability of transport parameters by Cu addition. Herein, we present improved carrier transport properties via I-doping in Cu0.008Bi2Te2.7Se0.3. Weighted mobility and effective mass are increased simultaneously by small amount doping of I at Te/Se-site. As a result, ~15% increased power factor and high average thermoelectric figure of merit (zT) of 0.79 were obtained in a wide temperature range.

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