Improved bias stability of solution-processed ZnSnO thin-film transistors by Zr addition

You Seung Rim; Dong Lim Kim; Woong Hee Jeong; Hyun Jae Kim

doi:10.1149/2.019202esl

Improved bias stability of solution-processed ZnSnO thin-film transistors by Zr addition

You Seung Rim, Dong Lim Kim, Woong Hee Jeong, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

We investigated the effect of adsorption of specific molecules on undoped zinc tin oxide (ZTO) and zirconium (Zr)-doped zinc tin oxide (ZZTO) thin-film transistors (TFTs) using a solution process. The specific chemisorbed species on the back channel region produced unstable ZTO TFT electrical properties under a bias stress test. However, the amount of specific chemisorbed ZTO TFT species could be controlled by Zr doping. As a result, the threshold voltage shift of the ZZTO TFT was dramatically improved comparing the ZTO TFT under positive bias stress.

Original language	English
Pages (from-to)	H37-H40
Journal	Electrochemical and Solid-State Letters
Volume	15
Issue number	2
DOIs	https://doi.org/10.1149/2.019202esl
Publication status	Published - 2012

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/2.019202esl

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@article{ad248b768fd54844a0151530453d8c0a,

title = "Improved bias stability of solution-processed ZnSnO thin-film transistors by Zr addition",

abstract = "We investigated the effect of adsorption of specific molecules on undoped zinc tin oxide (ZTO) and zirconium (Zr)-doped zinc tin oxide (ZZTO) thin-film transistors (TFTs) using a solution process. The specific chemisorbed species on the back channel region produced unstable ZTO TFT electrical properties under a bias stress test. However, the amount of specific chemisorbed ZTO TFT species could be controlled by Zr doping. As a result, the threshold voltage shift of the ZZTO TFT was dramatically improved comparing the ZTO TFT under positive bias stress.",

author = "Rim, {You Seung} and Kim, {Dong Lim} and Jeong, {Woong Hee} and Kim, {Hyun Jae}",

year = "2012",

doi = "10.1149/2.019202esl",

language = "English",

volume = "15",

pages = "H37--H40",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society, Inc.",

number = "2",

}

TY - JOUR

T1 - Improved bias stability of solution-processed ZnSnO thin-film transistors by Zr addition

AU - Rim, You Seung

AU - Kim, Dong Lim

AU - Jeong, Woong Hee

AU - Kim, Hyun Jae

PY - 2012

Y1 - 2012

N2 - We investigated the effect of adsorption of specific molecules on undoped zinc tin oxide (ZTO) and zirconium (Zr)-doped zinc tin oxide (ZZTO) thin-film transistors (TFTs) using a solution process. The specific chemisorbed species on the back channel region produced unstable ZTO TFT electrical properties under a bias stress test. However, the amount of specific chemisorbed ZTO TFT species could be controlled by Zr doping. As a result, the threshold voltage shift of the ZZTO TFT was dramatically improved comparing the ZTO TFT under positive bias stress.

AB - We investigated the effect of adsorption of specific molecules on undoped zinc tin oxide (ZTO) and zirconium (Zr)-doped zinc tin oxide (ZZTO) thin-film transistors (TFTs) using a solution process. The specific chemisorbed species on the back channel region produced unstable ZTO TFT electrical properties under a bias stress test. However, the amount of specific chemisorbed ZTO TFT species could be controlled by Zr doping. As a result, the threshold voltage shift of the ZZTO TFT was dramatically improved comparing the ZTO TFT under positive bias stress.

UR - http://www.scopus.com/inward/record.url?scp=84055218158&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84055218158&partnerID=8YFLogxK

U2 - 10.1149/2.019202esl

DO - 10.1149/2.019202esl

M3 - Article

AN - SCOPUS:84055218158

SN - 1099-0062

VL - 15

SP - H37-H40

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 2

ER -

Improved bias stability of solution-processed ZnSnO thin-film transistors by Zr addition

Abstract

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