@inproceedings{6cdc7dc25d53474c9fc2242c754e6ba6,
title = "Impact of thin WSiX insertion in tungsten polymetal gate on gate oxide reliability and gate contact resistance",
abstract = "By inserting thin WSix layer in tungsten poly gate stack we can effectively relieve the mechanical stress of gate hard mask nitride film, which contributes to the better gate oxide reliability and stress-immunity of trasistor. This insertion also could prevent the formation of Si-N dielectric layer atop poly-Si, which could lower the contact resistance between poly and tungsten effectively.",
author = "Sung, {Min Gyu} and Lim, {Kwan Yong} and Cho, {Heung Jae} and Lee, {Seung Ryong} and Jang, {Se Aug} and Yang, {Hong Seon} and Kwangok Kim and Kwak, {Noh Jung} and Sohn, {Hyun Chul} and Kim, {Jin Woong}",
year = "2006",
doi = "10.1109/RELPHY.2006.251247",
language = "English",
isbn = "0780394992",
series = "IEEE International Reliability Physics Symposium Proceedings",
pages = "374--378",
booktitle = "2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual",
note = "44th Annual IEEE International Reliability Physics Symposium, IRPS 2006 ; Conference date: 26-03-2006 Through 30-03-2006",
}