Impact of Organic Molecule-Induced Charge Transfer on Operating Voltage Control of Both n-MoS 2 and p-MoTe 2 Transistors

Yongjae Cho, Ji Hoon Park, Minju Kim, Yeonsu Jeong, Sanghyuck Yu, June Yeong Lim, Yeonjin Yi, Seongil Im

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)


Since transition metal dichalcogenide (TMD) semiconductors are found as two-dimensional van der Waals materials with a discrete energy bandgap, many TMD based field effect transistors (FETs) are reported as prototype devices. However, overall reports indicate that threshold voltage (V th ) of those FETs are located far away from 0 V whether the channel is p- or n-type. This definitely causes high switching voltage and unintended OFF-state leakage current. Here, a facile way to simultaneously modulate the V th of both p- and n-channel FETs with TMDs is reported. The deposition of various organic small molecules on the channel results in charge transfer between the organic molecule and TMD channels. Especially, HAT-CN molecule is found to ideally work for both p- and n-channels, shifting their V th toward 0 V concurrently. As a proof of concept, a complementary metal oxide semiconductor (CMOS) inverter with p-MoTe 2 and n-MoS 2 channels shows superior voltage gain and minimal power consumption after HAT-CN deposition, compared to its initial performance. When the same TMD FETs of the CMOS structure are integrated into an OLED pixel circuit for ambipolar switching, the circuit with HAT-CN film demonstrates complete ON/OFF switching of OLED pixel, which was not switched off without HAT-CN.

Original languageEnglish
Pages (from-to)2456-2463
Number of pages8
JournalNano letters
Issue number4
Publication statusPublished - 2019 Apr 10

Bibliographical note

Publisher Copyright:
Copyright © 2019 American Chemical Society.

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanical Engineering


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