Impact of H-Doping on n-Type TMD Channels for Low-Temperature Band-Like Transport

Han Sol Lee; Sam Park; June Yeong Lim; Sanghyuck Yu; Jongtae Ahn; Do Kyung Hwang; Yumin Sim; Je Ho Lee; Maeng Je Seong; Sehoon Oh; Hyoung Joon Choi; Seongil Im

doi:10.1002/smll.201901793

Impact of H-Doping on n-Type TMD Channels for Low-Temperature Band-Like Transport

Han Sol Lee, Sam Park, June Yeong Lim, Sanghyuck Yu, Jongtae Ahn, Do Kyung Hwang, Yumin Sim, Je Ho Lee, Maeng Je Seong, Sehoon Oh, Hyoung Joon Choi, Seongil Im

Department of Physics

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Band-like transport behavior of H-doped transition metal dichalcogenide (TMD) channels in field effect transistors (FET) is studied by conducting low-temperature electrical measurements, where MoTe₂, WSe₂, and MoS₂ are chosen for channels. Doped with H atoms through atomic layer deposition, those channels show strong n-type conduction and their mobility increases without losing on-state current as the measurement temperature decreases. In contrast, the mobility of unintentionally (naturally) doped TMD FETs always drops at low temperatures whether they are p- or n-type. Density functional theory calculations show that H-doped MoTe₂, WSe₂, and MoS₂ have Fermi levels above conduction band edge. It is thus concluded that the charge transport behavior in H-doped TMD channels is metallic showing band-like transport rather than thermal hopping. These results indicate that H-doped TMD FETs are practically useful even at low-temperature ranges.

Original language	English
Article number	1901793
Journal	Small
Volume	15
Issue number	38
DOIs	https://doi.org/10.1002/smll.201901793
Publication status	Published - 2019 Sept 1

Bibliographical note

Funding Information:
The authors acknowledge the financial support from NRF (NRL program: Grant No. 2017R1A2A1A05001278, SRC program: Grant No. 2017R1A5A1014862, vdWMRC center). S.O. and H.J.C. acknowledge the financial support from the NRF (Grant No. 2011-0018306). Computational resources were provided by the KISTI Supercomputing Center (Project No. KSC-2018-CRE-0097).

Publisher Copyright:
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

All Science Journal Classification (ASJC) codes

Biotechnology
Biomaterials
Chemistry(all)
Materials Science(all)

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title = "Impact of H-Doping on n-Type TMD Channels for Low-Temperature Band-Like Transport",

abstract = "Band-like transport behavior of H-doped transition metal dichalcogenide (TMD) channels in field effect transistors (FET) is studied by conducting low-temperature electrical measurements, where MoTe2, WSe2, and MoS2 are chosen for channels. Doped with H atoms through atomic layer deposition, those channels show strong n-type conduction and their mobility increases without losing on-state current as the measurement temperature decreases. In contrast, the mobility of unintentionally (naturally) doped TMD FETs always drops at low temperatures whether they are p- or n-type. Density functional theory calculations show that H-doped MoTe2, WSe2, and MoS2 have Fermi levels above conduction band edge. It is thus concluded that the charge transport behavior in H-doped TMD channels is metallic showing band-like transport rather than thermal hopping. These results indicate that H-doped TMD FETs are practically useful even at low-temperature ranges.",

author = "Lee, {Han Sol} and Sam Park and Lim, {June Yeong} and Sanghyuck Yu and Jongtae Ahn and Hwang, {Do Kyung} and Yumin Sim and Lee, {Je Ho} and Seong, {Maeng Je} and Sehoon Oh and Choi, {Hyoung Joon} and Seongil Im",

note = "Funding Information: The authors acknowledge the financial support from NRF (NRL program: Grant No. 2017R1A2A1A05001278, SRC program: Grant No. 2017R1A5A1014862, vdWMRC center). S.O. and H.J.C. acknowledge the financial support from the NRF (Grant No. 2011-0018306). Computational resources were provided by the KISTI Supercomputing Center (Project No. KSC-2018-CRE-0097). Publisher Copyright: {\textcopyright} 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

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AU - Lee, Han Sol

AU - Park, Sam

AU - Lim, June Yeong

AU - Yu, Sanghyuck

AU - Ahn, Jongtae

AU - Hwang, Do Kyung

AU - Sim, Yumin

AU - Lee, Je Ho

AU - Seong, Maeng Je

AU - Oh, Sehoon

AU - Choi, Hyoung Joon

AU - Im, Seongil

N1 - Funding Information: The authors acknowledge the financial support from NRF (NRL program: Grant No. 2017R1A2A1A05001278, SRC program: Grant No. 2017R1A5A1014862, vdWMRC center). S.O. and H.J.C. acknowledge the financial support from the NRF (Grant No. 2011-0018306). Computational resources were provided by the KISTI Supercomputing Center (Project No. KSC-2018-CRE-0097). Publisher Copyright: © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

PY - 2019/9/1

Y1 - 2019/9/1

N2 - Band-like transport behavior of H-doped transition metal dichalcogenide (TMD) channels in field effect transistors (FET) is studied by conducting low-temperature electrical measurements, where MoTe2, WSe2, and MoS2 are chosen for channels. Doped with H atoms through atomic layer deposition, those channels show strong n-type conduction and their mobility increases without losing on-state current as the measurement temperature decreases. In contrast, the mobility of unintentionally (naturally) doped TMD FETs always drops at low temperatures whether they are p- or n-type. Density functional theory calculations show that H-doped MoTe2, WSe2, and MoS2 have Fermi levels above conduction band edge. It is thus concluded that the charge transport behavior in H-doped TMD channels is metallic showing band-like transport rather than thermal hopping. These results indicate that H-doped TMD FETs are practically useful even at low-temperature ranges.

AB - Band-like transport behavior of H-doped transition metal dichalcogenide (TMD) channels in field effect transistors (FET) is studied by conducting low-temperature electrical measurements, where MoTe2, WSe2, and MoS2 are chosen for channels. Doped with H atoms through atomic layer deposition, those channels show strong n-type conduction and their mobility increases without losing on-state current as the measurement temperature decreases. In contrast, the mobility of unintentionally (naturally) doped TMD FETs always drops at low temperatures whether they are p- or n-type. Density functional theory calculations show that H-doped MoTe2, WSe2, and MoS2 have Fermi levels above conduction band edge. It is thus concluded that the charge transport behavior in H-doped TMD channels is metallic showing band-like transport rather than thermal hopping. These results indicate that H-doped TMD FETs are practically useful even at low-temperature ranges.

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Impact of H-Doping on n-Type TMD Channels for Low-Temperature Band-Like Transport

Abstract

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