Impact of H-Doping on n-Type TMD Channels for Low-Temperature Band-Like Transport

Han Sol Lee, Sam Park, June Yeong Lim, Sanghyuck Yu, Jongtae Ahn, Do Kyung Hwang, Yumin Sim, Je Ho Lee, Maeng Je Seong, Sehoon Oh, Hyoung Joon Choi, Seongil Im

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9 Citations (Scopus)


Band-like transport behavior of H-doped transition metal dichalcogenide (TMD) channels in field effect transistors (FET) is studied by conducting low-temperature electrical measurements, where MoTe2, WSe2, and MoS2 are chosen for channels. Doped with H atoms through atomic layer deposition, those channels show strong n-type conduction and their mobility increases without losing on-state current as the measurement temperature decreases. In contrast, the mobility of unintentionally (naturally) doped TMD FETs always drops at low temperatures whether they are p- or n-type. Density functional theory calculations show that H-doped MoTe2, WSe2, and MoS2 have Fermi levels above conduction band edge. It is thus concluded that the charge transport behavior in H-doped TMD channels is metallic showing band-like transport rather than thermal hopping. These results indicate that H-doped TMD FETs are practically useful even at low-temperature ranges.

Original languageEnglish
Article number1901793
Issue number38
Publication statusPublished - 2019 Sept 1

Bibliographical note

Funding Information:
The authors acknowledge the financial support from NRF (NRL program: Grant No. 2017R1A2A1A05001278, SRC program: Grant No. 2017R1A5A1014862, vdWMRC center). S.O. and H.J.C. acknowledge the financial support from the NRF (Grant No. 2011-0018306). Computational resources were provided by the KISTI Supercomputing Center (Project No. KSC-2018-CRE-0097).

Publisher Copyright:
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Biomaterials
  • Chemistry(all)
  • Materials Science(all)


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