Impact of fin thickness and height on read stability / write ability in tri-gate FinFET based SRAM

Junha Lee; Hanwool Jeong; Younghwi Yang; Jisu Kim; Seong Ook Jung

doi:10.1109/ISOCC.2012.6406900

Impact of fin thickness and height on read stability / write ability in tri-gate FinFET based SRAM

Junha Lee, Hanwool Jeong, Younghwi Yang, Jisu Kim, Seong Ook Jung

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

In this paper, we research on fin thickness (T_fin) and fin height (H_fin) effects on read stability and write ability of tri-gate FinFET based SRAM cell. The degree of drain induced barrier lowering changes with T_fin and fin H_fin. This makes threshold voltage (V_th) vary. Thus, T_fin and H_fin also influence the mean and standard deviation of read static noise margin (RSNM) and word-line write trip voltage (WWTV) since V_th variation is a dominant factor determining them. If T_fin increases, the mean of RSNM (μ_RSNM) and the mean of WWTV (μ_WWTV) decreases and increases, respectively, while the standard deviation of RSNM (σ_RSNM) and WWTV (σ_WWTV) are almost not changed. If H_fin increases, the μ_RSNM and μ_WWTV decreases and increases, respectively, while both σ_RSNM and σ_WWTV decrease. However, for a sufficiently small T_fin, the effect of H_fin on μ_RSNM and μ_WWTV becomes negligible.

Original language	English
Title of host publication	ISOCC 2012 - 2012 International SoC Design Conference
Pages	479-482
Number of pages	4
DOIs	https://doi.org/10.1109/ISOCC.2012.6406900
Publication status	Published - 2012
Event	2012 International SoC Design Conference, ISOCC 2012 - Jeju Island, Korea, Republic of Duration: 2012 Nov 4 → 2012 Nov 7

Publication series

Name	ISOCC 2012 - 2012 International SoC Design Conference

Other

Other	2012 International SoC Design Conference, ISOCC 2012
Country/Territory	Korea, Republic of
City	Jeju Island
Period	12/11/4 → 12/11/7

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/ISOCC.2012.6406900

Cite this

@inproceedings{b8821186239b4a1f9778860942ff0742,

title = "Impact of fin thickness and height on read stability / write ability in tri-gate FinFET based SRAM",

abstract = "In this paper, we research on fin thickness (Tfin) and fin height (Hfin) effects on read stability and write ability of tri-gate FinFET based SRAM cell. The degree of drain induced barrier lowering changes with Tfin and fin Hfin. This makes threshold voltage (Vth) vary. Thus, Tfin and Hfin also influence the mean and standard deviation of read static noise margin (RSNM) and word-line write trip voltage (WWTV) since Vth variation is a dominant factor determining them. If Tfin increases, the mean of RSNM (μRSNM) and the mean of WWTV (μWWTV) decreases and increases, respectively, while the standard deviation of RSNM (σRSNM) and WWTV (σWWTV) are almost not changed. If Hfin increases, the μRSNM and μWWTV decreases and increases, respectively, while both σRSNM and σWWTV decrease. However, for a sufficiently small Tfin, the effect of Hfin on μRSNM and μWWTV becomes negligible.",

author = "Junha Lee and Hanwool Jeong and Younghwi Yang and Jisu Kim and Jung, {Seong Ook}",

year = "2012",

doi = "10.1109/ISOCC.2012.6406900",

language = "English",

isbn = "9781467329880",

series = "ISOCC 2012 - 2012 International SoC Design Conference",

pages = "479--482",

booktitle = "ISOCC 2012 - 2012 International SoC Design Conference",

note = "2012 International SoC Design Conference, ISOCC 2012 ; Conference date: 04-11-2012 Through 07-11-2012",

}

Lee, J, Jeong, H, Yang, Y, Kim, J & Jung, SO 2012, Impact of fin thickness and height on read stability / write ability in tri-gate FinFET based SRAM. in ISOCC 2012 - 2012 International SoC Design Conference., 6406900, ISOCC 2012 - 2012 International SoC Design Conference, pp. 479-482, 2012 International SoC Design Conference, ISOCC 2012, Jeju Island, Korea, Republic of, 12/11/4. https://doi.org/10.1109/ISOCC.2012.6406900

Impact of fin thickness and height on read stability / write ability in tri-gate FinFET based SRAM. / Lee, Junha; Jeong, Hanwool; Yang, Younghwi et al.
ISOCC 2012 - 2012 International SoC Design Conference. 2012. p. 479-482 6406900 (ISOCC 2012 - 2012 International SoC Design Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Impact of fin thickness and height on read stability / write ability in tri-gate FinFET based SRAM

AU - Lee, Junha

AU - Jeong, Hanwool

AU - Yang, Younghwi

AU - Kim, Jisu

AU - Jung, Seong Ook

PY - 2012

Y1 - 2012

N2 - In this paper, we research on fin thickness (Tfin) and fin height (Hfin) effects on read stability and write ability of tri-gate FinFET based SRAM cell. The degree of drain induced barrier lowering changes with Tfin and fin Hfin. This makes threshold voltage (Vth) vary. Thus, Tfin and Hfin also influence the mean and standard deviation of read static noise margin (RSNM) and word-line write trip voltage (WWTV) since Vth variation is a dominant factor determining them. If Tfin increases, the mean of RSNM (μRSNM) and the mean of WWTV (μWWTV) decreases and increases, respectively, while the standard deviation of RSNM (σRSNM) and WWTV (σWWTV) are almost not changed. If Hfin increases, the μRSNM and μWWTV decreases and increases, respectively, while both σRSNM and σWWTV decrease. However, for a sufficiently small Tfin, the effect of Hfin on μRSNM and μWWTV becomes negligible.

AB - In this paper, we research on fin thickness (Tfin) and fin height (Hfin) effects on read stability and write ability of tri-gate FinFET based SRAM cell. The degree of drain induced barrier lowering changes with Tfin and fin Hfin. This makes threshold voltage (Vth) vary. Thus, Tfin and Hfin also influence the mean and standard deviation of read static noise margin (RSNM) and word-line write trip voltage (WWTV) since Vth variation is a dominant factor determining them. If Tfin increases, the mean of RSNM (μRSNM) and the mean of WWTV (μWWTV) decreases and increases, respectively, while the standard deviation of RSNM (σRSNM) and WWTV (σWWTV) are almost not changed. If Hfin increases, the μRSNM and μWWTV decreases and increases, respectively, while both σRSNM and σWWTV decrease. However, for a sufficiently small Tfin, the effect of Hfin on μRSNM and μWWTV becomes negligible.

UR - http://www.scopus.com/inward/record.url?scp=84873965600&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84873965600&partnerID=8YFLogxK

U2 - 10.1109/ISOCC.2012.6406900

DO - 10.1109/ISOCC.2012.6406900

M3 - Conference contribution

AN - SCOPUS:84873965600

SN - 9781467329880

T3 - ISOCC 2012 - 2012 International SoC Design Conference

SP - 479

EP - 482

BT - ISOCC 2012 - 2012 International SoC Design Conference

T2 - 2012 International SoC Design Conference, ISOCC 2012

Y2 - 4 November 2012 through 7 November 2012

ER -

Impact of fin thickness and height on read stability / write ability in tri-gate FinFET based SRAM

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this