Identity of the conducting nano-filaments in TiO2 and the resistance switching mechanism of TiO2/NiO stacked layers

Kyung Min Kim, Deok Hwang Kwon, Jae Hyuck Jang, Min Hwan Lee, Seul Jie Song, Gun Hwan Kim, Jun Yeong Seok, Bora Lee, Seungwu Han, Miyoung Kim, Cheol Seong Hwang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The resistance switching (RS) behaviors of TiO2 and TiO 2/NiO thin films were examined. The presence of conductive nanofilaments was confirmed directly by high-resolution transmission electron microscopy (HRTEM) in a Pt/TiO2/Pt system. The HRTEM images identified Magnéli structured filaments (mostly Ti4O 7 phase) of both set and reset states. The local electrical properties were confirmed by in-situ current-voltage measurements in HRTEM. The in-situ HRTEM observation confirmed the structural change of the filament during set and reset switching. The RS behaviour of a stacked material composed of n-type TiO2 and p-type NiO was also examined. The switching time could be decreased by ∼1,000 times compared to the single layer material by stacking the two layers.

Original languageEnglish
Title of host publicationPhysics and Technology of High-k Materials 8
PublisherElectrochemical Society Inc.
Pages291-298
Number of pages8
Edition3
ISBN (Electronic)9781607681724
ISBN (Print)9781566778220
DOIs
Publication statusPublished - 2010

Publication series

NameECS Transactions
Number3
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

All Science Journal Classification (ASJC) codes

  • General Engineering

Fingerprint

Dive into the research topics of 'Identity of the conducting nano-filaments in TiO2 and the resistance switching mechanism of TiO2/NiO stacked layers'. Together they form a unique fingerprint.

Cite this