Hysteresis behavior of electrical resistance in Pd thin films during the process of absorption and desorption of hydrogen gas

Eunsongyi Lee; Jun Min Lee; Ja Hoon Koo; Wooyoung Lee; Taeyoon Lee

doi:10.1016/j.ijhydene.2010.04.051

Hysteresis behavior of electrical resistance in Pd thin films during the process of absorption and desorption of hydrogen gas

Eunsongyi Lee, Jun Min Lee, Ja Hoon Koo, Wooyoung Lee, Taeyoon Lee

Research output: Contribution to journal › Article › peer-review

156 Citations (Scopus)

Abstract

We report the fabrication of a novel hydrogen sensor that utilizes the electrical resistance changes in the palladium thin films with nanometer thicknesses. The sensing mechanism is based on transitory absorption of hydrogen atoms into the palladium layer, which leads to the reversible alteration of the electrical resistance. In concentrated hydrogen ambient, the excess hydrogen absorption process leads to mechanical deformation on the surface of the palladium films, corresponding to the phase transition from α-phase to β-phase. The reversible sensing process results in a hysteresis curve for resistive properties, of which the height (sensitivity) could be controlled by manipulating the thickness of the palladium layers. The peel-off phenomena on the surface of the palladium film were suppressed by decreasing the thickness of the film. At the thickness of 20 nm, a hysteresis curve of resistance was obtained without any structural change in the palladium thin film. These results provide a significant insight to the fundamental understanding of the relationship between the electrical sensitivity of pure Pd thin films and related structural deformation, which is essential to develop robust H-sensors with high sensibility.

Original language	English
Pages (from-to)	6984-6991
Number of pages	8
Journal	International Journal of Hydrogen Energy
Volume	35
Issue number	13
DOIs	https://doi.org/10.1016/j.ijhydene.2010.04.051
Publication status	Published - 2010 Jul

Bibliographical note

Funding Information:
This work was supported by the Agency for Defense Development through the Defense Nano Technology Application Center, Priority Research Centers Program ( 2009-0093823 ) through the National Research Foundation of Korea (NRF), the Basic Research Program grant ( R01-2008-000-21078-0 ), Seoul Research and Business Development Program ( 10816 ). T Lee is grateful for the System IC 2010 program of the Ministry of Knowledge Economy, and Republic of Korea ( 10030517-2009-03 , Advanced CMOS image sensor using 3D integration).

All Science Journal Classification (ASJC) codes

Renewable Energy, Sustainability and the Environment
Fuel Technology
Condensed Matter Physics
Energy Engineering and Power Technology

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.ijhydene.2010.04.051

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title = "Hysteresis behavior of electrical resistance in Pd thin films during the process of absorption and desorption of hydrogen gas",

abstract = "We report the fabrication of a novel hydrogen sensor that utilizes the electrical resistance changes in the palladium thin films with nanometer thicknesses. The sensing mechanism is based on transitory absorption of hydrogen atoms into the palladium layer, which leads to the reversible alteration of the electrical resistance. In concentrated hydrogen ambient, the excess hydrogen absorption process leads to mechanical deformation on the surface of the palladium films, corresponding to the phase transition from α-phase to β-phase. The reversible sensing process results in a hysteresis curve for resistive properties, of which the height (sensitivity) could be controlled by manipulating the thickness of the palladium layers. The peel-off phenomena on the surface of the palladium film were suppressed by decreasing the thickness of the film. At the thickness of 20 nm, a hysteresis curve of resistance was obtained without any structural change in the palladium thin film. These results provide a significant insight to the fundamental understanding of the relationship between the electrical sensitivity of pure Pd thin films and related structural deformation, which is essential to develop robust H-sensors with high sensibility.",

author = "Eunsongyi Lee and Lee, {Jun Min} and Koo, {Ja Hoon} and Wooyoung Lee and Taeyoon Lee",

note = "Funding Information: This work was supported by the Agency for Defense Development through the Defense Nano Technology Application Center, Priority Research Centers Program ( 2009-0093823 ) through the National Research Foundation of Korea (NRF), the Basic Research Program grant ( R01-2008-000-21078-0 ), Seoul Research and Business Development Program ( 10816 ). T Lee is grateful for the System IC 2010 program of the Ministry of Knowledge Economy, and Republic of Korea ( 10030517-2009-03 , Advanced CMOS image sensor using 3D integration).",

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AU - Koo, Ja Hoon

AU - Lee, Wooyoung

AU - Lee, Taeyoon

N1 - Funding Information: This work was supported by the Agency for Defense Development through the Defense Nano Technology Application Center, Priority Research Centers Program ( 2009-0093823 ) through the National Research Foundation of Korea (NRF), the Basic Research Program grant ( R01-2008-000-21078-0 ), Seoul Research and Business Development Program ( 10816 ). T Lee is grateful for the System IC 2010 program of the Ministry of Knowledge Economy, and Republic of Korea ( 10030517-2009-03 , Advanced CMOS image sensor using 3D integration).

PY - 2010/7

Y1 - 2010/7

N2 - We report the fabrication of a novel hydrogen sensor that utilizes the electrical resistance changes in the palladium thin films with nanometer thicknesses. The sensing mechanism is based on transitory absorption of hydrogen atoms into the palladium layer, which leads to the reversible alteration of the electrical resistance. In concentrated hydrogen ambient, the excess hydrogen absorption process leads to mechanical deformation on the surface of the palladium films, corresponding to the phase transition from α-phase to β-phase. The reversible sensing process results in a hysteresis curve for resistive properties, of which the height (sensitivity) could be controlled by manipulating the thickness of the palladium layers. The peel-off phenomena on the surface of the palladium film were suppressed by decreasing the thickness of the film. At the thickness of 20 nm, a hysteresis curve of resistance was obtained without any structural change in the palladium thin film. These results provide a significant insight to the fundamental understanding of the relationship between the electrical sensitivity of pure Pd thin films and related structural deformation, which is essential to develop robust H-sensors with high sensibility.

AB - We report the fabrication of a novel hydrogen sensor that utilizes the electrical resistance changes in the palladium thin films with nanometer thicknesses. The sensing mechanism is based on transitory absorption of hydrogen atoms into the palladium layer, which leads to the reversible alteration of the electrical resistance. In concentrated hydrogen ambient, the excess hydrogen absorption process leads to mechanical deformation on the surface of the palladium films, corresponding to the phase transition from α-phase to β-phase. The reversible sensing process results in a hysteresis curve for resistive properties, of which the height (sensitivity) could be controlled by manipulating the thickness of the palladium layers. The peel-off phenomena on the surface of the palladium film were suppressed by decreasing the thickness of the film. At the thickness of 20 nm, a hysteresis curve of resistance was obtained without any structural change in the palladium thin film. These results provide a significant insight to the fundamental understanding of the relationship between the electrical sensitivity of pure Pd thin films and related structural deformation, which is essential to develop robust H-sensors with high sensibility.

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Hysteresis behavior of electrical resistance in Pd thin films during the process of absorption and desorption of hydrogen gas

Abstract

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